• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.117-120
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• 2005

The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.180-183
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• 2006

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

• 산업경영시스템학회지
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• 제10권16호
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• pp.81-88
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• 1987

This article develops to determine and to allocate the two level factors at the table of orthogonal arrays. The column numbers of two factors and two-factor interaction can be determined in applying the bit-by-bit EX-OR operation. The assignment of the Two factors and Two factor interaction is attained by USING COMPUTER, IBM PC/AT applying algorithm of EX-OR operation Theory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제6권2호
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• pp.75-84
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• 2002

Using good properties of an optimal normal basis of type I in a finite field ${\mathbb{F}}_{2^m}$, we present a design of a bit serial multiplier of Berlekamp type, which is very effective in computing $xy^2$. It is shown that our multiplier does not need a basis conversion process and a squaring operation is a simple permutation in our basis. Therefore our multiplier provides a fast and an efficient hardware architecture for a bit serial multiplication of two elements in ${\mathbb{F}}_{2^m}$.

• 한국통신학회논문지
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• 제14권5호
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• pp.442-452
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• 1989

시스토릭 어레이를 이용한 FIR 필터를 구현하여 고속처리가 가능하게 설계하였으며, Cascade하게 칩연결이 가능하도록 설계하여 최대 128차의 FIR 필터를 실현할 수 있도록 하였다. 필터 계수는 Sign and Magnitude 형태로 외부에서 입력하며, 데이터는 2's Complement 형태로 입력되게 시스템을 설계하였다.

• 전자공학회논문지CI
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• 제47권5호
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• pp.10-16
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• 2010

XML은 점점 데이터 교환과 정보 관리에서 중요하게 여겨진다. 따라서 XML 문서들을 접근, 질의, 저장하는 효율적인 방법들을 개발하기 위한 많은 노력이 진행되고 있다. 본 논문은 XML 문서들을 효율적으로 군집화 하는 새로운 기법을 제안한다. XML 문서를 군집화하기 위해 문서를 대표하는 비트 벡터를 제안한다. 두 XML 문서의 유사도는 대응하는 두 비트 벡터간의 bit-wise AND 연산에 의해서 측정된다. 실험 결과 XML 문서의 특징으로 비트 벡터가 사용되었을 때 군집화가 제대로 그리고 효율적으로 형성됨을 알 수 있다.

• 한국통신학회논문지
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• 제22권7호
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• pp.1487-1504
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• 1997

In this paper, the two-stage variable block-size multiresolution motion algorithm is proposed for an interframe coding scheme in the wavelet decomposition. An optimal bit allocagion between motion vectors and the prediction error in sense of minimizing the total bit rate is obtained by the proposed algorithm. The proposed algorithm consists of two stages for motion estimatation and only the first stage can be separated and run on its own. The first stage of the algorithm introduces a new method to give the lower bit rate of the displaced frame difference as well as a smooth motion field. In the second stage of the algorithm, the technique is introduced to have more accurate motion vectors in detailed areas, and to decrease the number of motion vectors in uniform areas. The algorithm aims at minimizin gthe total bit rate which is sum of the motion vectors and the displaced frame difference. The optimal bit allocation between motion vectors and displaced frame difference is accomplished by reducing the number of motion vectors in uniform areas and it is based on a botom-up construction of a quadtree. An entropy criterion aims at the control of merge operation. Simulation resuls show that the algorithm lends itself to the wavelet based image sequence coding and outperforms the conventional scheme by up to the maximum 0.28 bpp.