• 제목/요약/키워드: Tungsten

검색결과 1,583건 처리시간 0.03초

텅스텐-알루미나 접합거동에 미치는 산소분압의 영향 (Effect of Oxygen Partial Pressure on Tungsten-Alumina Bonding Behavior)

  • 박정현;이상진
    • 한국세라믹학회지
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    • 제27권6호
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    • pp.755-762
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    • 1990
  • The tungsten paste was printed on the surface of 92% alumina sheet which was made by type casting process. The printed tungsten was bonded on the Al2O3 by co-firing in reducing atmosphere. During the co-firing, the binder burn-out was easier in wet H2 atmosphere than in dry H2, which affected sintered density. In practically, the use of wet H2 above 100$0^{\circ}C$ was beneficial for density of alumina and bond strength. This phenomena occured more distinctly when atmosphere varied from dry H2 to wet H2 than varied dew point in wet H2. In wet H2, the improvement in bonding strength can be attributed to good glass migration into the metal layer due to inhibition of the tungsten particle growth, with increase of alumina density, at the temperatrue higher than 100$0^{\circ}C$.

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IC소자용 질화 텅스텐 박막의 면저항 특성 (The Sheet Resistance Properties of Tungsten Nitride Thin films for Intergrated Circuit)

  • 이우선;정용호;김남오;정종상;유병수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.94-97
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    • 1997
  • We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

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Oxidation Behavior of WC-TiC-TaC Binderless Cemented Carbide under Low Partial Pressure of Oxygen

  • Uchiyama, Yasuo;Ueno, Shuji;Sano, Hideaki;Tanaka, Hiroki;Nakahara, Kenji;Sakaguchi, Shigeya;Nakano, Osamu
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.355-356
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    • 2006
  • WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.

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전해 가공을 이용한 WC 미세축 제작 (WC Micro-shaft Fabrication Using Electrochemical Etching)

  • 최세환;류시형;최덕기;주종남
    • 한국정밀공학회지
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    • 제21권6호
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    • pp.172-178
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    • 2004
  • Tungsten carbide microshaft can be used as various micro-tools for MEMS because it has high hardness and high rigidity. In this study, experiments are performed to produce tungsten carbide micro-shaft using electrochemical etching. H$_2$SO$_4$ solution is used as electrolyte because it can dissolve tungsten and cobalt simultaneously. Optimal electrolyte concentration and machining voltage satisfying uniform shape, good surface quality, and high MRR of workpiece are experimentally found. By controlling the various machining parameters, a straight micro-shaft with 5 ${\mu}{\textrm}{m}$ diameter, 3 mm length, and 0.2$^{\circ}$taper angle was obtained.

스퍼터링으로 증착한 바나듐 텅스텐 산화물 박막의 전기화학적 거동 (Electrochemical Behavior of Vanadium Trungsten Oxide Thin Films Deposited by Sputtering)

  • 박영신;이병일;주승기
    • 한국표면공학회지
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    • 제30권2호
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    • pp.121-127
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    • 1997
  • Vanadium tungsten oxide thin films were formed by RF magnetron sputtering and the effects of tungsten addition on the crystallinity and on the electrochemical behavior were investigated. X-ray analysis revealed that amorphized films could be obtained by tungase addition. In order to investigate the electrochemical behavior of the vanadium tungsten oxide films, electrochemical insertion and extraction of lithium were out in 1m $LiCIO_4$-PC-DME electrolyte using litium metal as a counter electrode. When the tungsten was added to the $V_2O_5$ films, cycling reversibility was considerably improved. Electrochemical test showed the cell capacity of about $70\mu\;Ah/\textrm{cm}^2-\mu\textrm{m}$ when the amount of additive tungseten reached 30 atomic percent. No appreciable degradation of the cell capacity could be observed after hundred cycles of insertion and extration od Li.

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육방정계 텅스텐옥사이드 나노분말의 합성과 고성능 가스센서응용을 위한 성능 평가 (Fabrication and Characterization of Hexagonal Tungsten Oxide Nanopowders for High Performance Gas Sensing Application)

  • 박진수
    • 한국분말재료학회지
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    • 제26권1호
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    • pp.28-33
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    • 2019
  • The gas sensor is essential to monitoring dangerous gases in our environment. Metal oxide (MO) gas sensors are primarily utilized for flammable, toxic and organic gases and $O_3$ because of their high sensitivity, high response and high stability. Tungsten oxides ($WO_3$) have versatile applications, particularly for gas sensor applications because of the wide bandgap and stability of $WO_3$. Nanosize $WO_3$ are synthesized using the hydrothermal method. As-prepared $WO_3$ nanopowders are in the form of nanorods and nanorulers. The crystal structure is hexagonal tungsten bronze ($MxWO_3$, x =< 0.33), characterized as a tunnel structure that accommodates alkali ions and the phase stabilizer. A gas detection test reveals that $WO_3$ can detect acetone, butanol, ethanol, and gasoline. This is the first study to report this capability of $WO_3$.