Proceedings of the Korean Powder Metallurgy Institute Conference (한국분말야금학회:학술대회논문집)
- 2006.09a
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- Pages.355-356
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- 2006
Oxidation Behavior of WC-TiC-TaC Binderless Cemented Carbide under Low Partial Pressure of Oxygen
- Uchiyama, Yasuo (Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University) ;
- Ueno, Shuji (Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University) ;
- Sano, Hideaki (Department of Materials Science and Engineering, Faculty of Engineering, Nagasaki University) ;
- Tanaka, Hiroki (Nippon Tungsten Co. Ltd.) ;
- Nakahara, Kenji (Nippon Tungsten Co. Ltd.) ;
- Sakaguchi, Shigeya (Nippon Tungsten Co. Ltd.) ;
- Nakano, Osamu (Nippon Tungsten Co. Ltd.)
- Published : 2006.09.24
Abstract
WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.