• 한국재료학회지
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• 제9권1호
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• pp.104-107
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• 1999

Fe 강제오염된 p-Si에서 여러 가지 quenching 조건에 기인한 에너지 준위들을 deep level transient spectroscopy(DLTS)를 이용하여 측정하였으며, 또한 선택 에칭방법/Optical microscope을 이용한 BMD(bulk micro-defeat)측정을 통하여 Fe 침전물 형서에, Fe 확산을 위한 어닐링 후 Cooling 조건이 미치는 영향을 분석하였다. Cooling 조건들이 여러 종류의 hole trap과 bulk micro-defeat(BMD)형성에 영햐을 주는 것으로 나타났으며, normal cooling의 경우 $\textrm{Fe}_{i}$, 또는 Fe-O complex 와 관계있는 $\textrm{T}_{1},\;\textrm{T}_{2},\;\textrm{T}_{3},\;\textrm{T}_{4}$ trap이 나타났으며, Slow Cooling 의 영향으로 인하여 활성화 에너지가 0.4eV에 해당하는 trap들이 관찰되었다. 또한 $\textrm{Fe}^{+}\textrm{}^{-}$ pair(H4: 0.56eV)는 $\textrm{LN}_{2}$ quenching한 경우에서만 나타났다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.34-39
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• 2014

This paper discusses the 3-level charge pumping (CP) method in planar-type Silicon-Oxide-High-k-Oxide-Silicon (SOHOS) and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) devices to find out the reason of the degradation of data retention properties. In the CP technique, pulses are applied to the gate of the MOSFET which alternately fill the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. The 3-level charge pumping method may be used to determine not only interface trap densities but also capture cross sections as a function of trap energy. By applying this method, SOHOS device found to have a higher interface trap density than SONOS device. Therefore, degradation of data retention characteristics is attributed to the many interface trap sites.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.442-446
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• 1998

$\alpha$--sulfur single crystal which has orthorohmbic structure was grown using Bridgman method. The indirect optical energy band gap of this crystal are 2.65 and 2.82 eV at 10 and 300K, respectively. The wavelengths of photoluminecence(PL) peaks are 543 and 596 nm at 10k, By thermally stimulated current (TSC) method, two electron traps($D_1,D_2$) located at 0/23 and 0.43eV below the conduction band and a hole trap(A) located at 0.31 eV above the valence band are observed. PL mechanism of $\alpha$-sulfur single crystal is analyzed using the values of optical energy band gap at 10k two electron traps and a hole trap.

• 전자공학회논문지
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• 제52권4호
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• pp.56-61
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• 2015

고주파에서 이상적인 커패시턴스-전압 곡선과 결함이 존재하여 늘어진 커패시턴스-전압 곡선을 SiGe p-FinFET 시뮬레이션을 이용하여 보였다. 두 곡선이 게이트 전압 축으로 늘어진 전압 차이를 이용하여 평균적인 계면 결함 밀도를 구할 수 있었다. 또한 같은 특성을 이용하는 Terman의 방법으로 에너지에 따른 계면 결함 밀도를 추출하고, 동일한 에너지 구간에서 평균값을 구하였다. 전압 차이로 구한 평균 계면 결함 밀도를 Terman의 방법으로 구한 평균값과 비교하여, 두 방법의 결과가 거의 비슷한 평균 계면 결함 밀도를 나타낸다는 것을 검증하였다.

• 천문학회지
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• 제36권spc1호
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• pp.63-73
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• 2003

Solar flares present a number of radiative characteristics indicative of kinetic processes of high energy particles. Proper understanding of the kinetic processes, however, relies on how well we can separate the acceleration from transport characteristics. In this paper, we discuss microwave and hard X-ray bursts as a powerful tool in investigating the acceleration and transport of high energy electrons. After a brief review of the studies devoted to the kinetic process of solar flare particles, we cast them into a simple formulation which allows us to handle the injection, trap, and precipitation of flare electrons self-consistently. The formulation is then taken as a basis for interpreting and analyzing a set of impulsive and gradual bursts occurred on 2001 April 6 observed with the Owens Valley Solar Array, and HXT/WBS onboard Yohkoh satellite. We quantify the acceleration, trap, and precipitation processes during each burst in terms of relevant time scales, and also determine ambient density and magnetic field. Our result suggests that it should be the acceleration property, in particular, electron pitch angle distribution, rather than the trap condition, that is mainly responsible for the distinctive properties of the impulsive and gradual flares.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.312-316
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• 1994

In this study, ln$_{1-x}$ Ga$_{x}$P alloy crystal which has different compositions were grown by the temperature gradient solution(TGS) method, and the properties of deep levels were measured in the temperature range of 9OK-450K. We find the four deep levels of E$_{1}$, E$_{2}$(248meV), E$_{3}$(386meV) and E$_{4}$(618meV) in GaP, which has composition of Ga in In$_{1-x}$ Ga$_{x}$P is one, and the trap densities of E$_{3}$ and E4 levels were 7.5*10$^{14}$ cm$^{-3}$ and 9*10$^{14}$ cm$^{-3}$ , respectively. A broad deep level spectra was revealed in In$_{1-x}$ Ga$_{x}$P whose composition of Ga, x, were 0.56 and 0.83, and the activation energy and trap densities were about 430meV and 6*10$^{14}$ cm$^{-3}$ , respectively.ectively.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.635-642
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• 2014

The space charge behaviors of oil-paper insulation affect the stability and security of oil-filled converter transformers of traditional and new energies. This paper presents the results of the electrical aging of oil-impregnated paper under AC-DC combined voltages by the pulsed electro-acoustic technique. Data mining and feature extractions were performed on the influence of electrical aging on charge dynamics based on the experiment results in the first stage. Characteristic parameters such as total charge injection and apparent charge mobility were calculated. The influences of electrical aging on the trap energy distribution of an oil-paper insulation system were analyzed and discussed. Longer electrical aging time would increase the depth and energy density of charge trap, which decelerates the apparent charge mobility and increases the probability of hot electron formation. This mechanism would accelerate damage to the cellulose and the formation of discharge channels, enhance the acceleration of the electric field distortion, and shorten insulation lifetime under AC-DC combined voltages.

• Current Optics and Photonics
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• 제5권3호
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• pp.220-228
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• 2021

To improve the measurement accuracy of a solar-radiation observer instrument, aiming at the problem of multiorder-stray-light interference caused by the diffraction of the flat-field concave grating in the spectroscopic system, straylight suppression methods for different forms of optical traps are studied. According to the grating surface-scattering distribution-function model, the bidirectional scattering distribution function (BSDF) of a dust-polluted surface and the flat-field concave grating's transition area of the spectroscopic system is calculated, and a Lyot stop with blade baffle is designed to suppress this kind of stray light. For diffraction multiorder stray light, based on the theory of light-energy transmission, a design for precise positioning of the trench optical trap is proposed. The superiority of the method is verified through simulation and actual measurement. The simulation results show that in a spectroscopic system approximately 160 mm × 140 mm × 80 mm in size, the energy of the stray light is reduced by one order of magnitude by means of the trench optical trap and Lyot stop, and the number of beams is reduced from 5664 to 1040. The actual measurements show that the stray-light-suppression efficiency is about 69.4%, which is effective reduction of the amount of stray light.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 추계학술발표회
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• pp.856-857
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• 2005

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.34-34
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• 2009

The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory with $SiO_2/Si_3N_4/SiO_2/Si$ engineered tunnel barrier, $HfO_2$ charge trap layer and $Al_2O_3$ blocking oxide layer (MAHONOS) were investigated. The energy bad diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the best thickness combination of MAHONOS is confirmed. Moreover, not enhanced P/E speed (Program: about $10^6$ times) (Erase: about $10^4$ times) but also enhanced retention and endurance characteristics are represented.