• Korean Journal of Organic Agriculture
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• v.20 no.4
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• pp.643-654
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• 2012

We conducted the experiment in order to evaluate the control effect of whitefly using the sticky trap. Both Bemisia tabaci and Trialeurodes vaporariorum were more attracted to yellow sticky trap than white or blue colored traps. When yellow sticky traps were installed in different height around tomato, catches of B. tabaci were not significantly different among the traps and catches of T. vaporariorum on the traps in the upper position were more than lower position. T. vaporariorum was more attracted to trap when host plant is smaller. The attracted number to yellow sticky traps were not significantly different between whiteflies (B. tabaci and T. vaporariorum) and their parasitoids (Encarsia formosa and Eretmocerus mundus). Yellow sticky trap reduced population density of both B. tabaci and T. vaporariorum by more than 80% on tomato nursery in a screen cage. Population density of whiteflies in greenhouse installed yellow sticky traps was less than one third of that in untreated greenhouse.

• Journal of the Korean Society of Food Science and Nutrition
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• v.39 no.3
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• pp.363-368
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• 2010

Artemisia princeps has been utilized as a traditional medicine for a variety of diseases in Korea. In this study, we investigated the effects of Artemisia princeps extract (APE) on bone metabolism both in vitro using primary mouse bone marrow-derived macrophage and in vivo using ovariectomized rats. APE decreased the number of tartrate-resistant acid phosphatase (TRAP)-positive multinucleated cells and TRAP activity. Also, APE inhibited bone resorptive activity of differentiated osteoclasts. In ovariectomized rats, APE alleviated the decrease in the trabecular bone mineral density. These results showed that APE might be useful for the prevention of postmenopausal bone loss.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.31-37
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• 2016

In the steam system, a stream trap valve discharges a condensate and a non-condensable gas. It also prevents stream from being leaked. The free float stream trap valve is a mechanical type of stream trap. The valve is opened when a hallow ball is floated due to the density of the condensate through the condensate flows into the valve. On the other hand, when the flow of the condensate is completed, the valve is closed as the float subsides due to the weight of the structure and the stream is blocked. In addition, the bimetal lifts the hallow ball, which discharges the non-condensable gas. In this study, the performance of the properties of the free float stream trap valve, the method of support for three points, and the orifice design are researched. Moreover, the condensate discharge capacity of the free float stream trap valve is calculated from the experiment.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• Korean journal of applied entomology
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• v.57 no.3
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• pp.143-149
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• 2018

The black pine bast scale (BPBS), Matsucoccus thunbergianae (Homoptera: Margarodidae), is one of the most serious insect pests of Japanese black pine (Pinus thunbergiana) in Korea. The density of BPBS varies by tree, branch, and location, making it difficult to monitor them. This study investigated to find a monitoring method for distribution and occurrence of BPBS on Japanese black pine using the yellow sticky trap. The density of male BPBS on sticky trap and nymphs from the branch of Japanese black pine was highly correlated in various surveyed sites. The number of male BPBS that attracted to the yellow sticky traps was higher in upper crown than the lower crown of P. thunbergiana but this was not statistically significant. The density of BPBS nymphs increases with the increase of the diameter of the branch, but the differences were not significant from 1 to 2.5 cm. BPBS was highly distributed in bottom-faced branch than the upper-faced branch of P. thunbergiana. Therefore, we suggest, the yellow sticky trap for the monitoring of BPBS and when examining the nymph density in branch, it is recommended that the bottom-faced branch of the 2-2.5 cm diameter branch be examined.

• Proceedings of the National Institute of Ecology of the Republic of Korea
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• v.4 no.2
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• pp.72-78
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• 2023

The leopard (Panthera pardus) is one of the most widespread felids worldwide. Despite their wide distribution, reliable data on leopard population densities are still inadequate for conservation and management strategies in different landscapes. In the present study, we estimated leopard density using camera traps in the Ranthambhore Tiger Reserve (RTR), Rajasthan, India, between December 2010 and February 2011, where leopards coexist alongside a high density of tigers (Panthera tigris), a larger predator (RTR). A sampling effort of 4,450 trap days was made from 178 camera trapping stations over 75 days, resulting in 46 suitable photo captures (25 right flanks and 21 left flanks). In total, 18 individuals (7 males, 8 females, and 3 unknown sexes) were identified using the right flanks, and the estimated leopard density was 8.8 (standard error=2.8) individuals/100 km². Leopard density appeared to respond to small prey (<50 kg weight) richness. As this is the first systematic study to provide baseline information on leopard density in RTR, it could form a baseline for comparison in future investigations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.17-19
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• 2004

The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide($N_2O$) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the $SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.