Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Analysis of Trap Dependence on Charge Trapping Layer Thickness in SONOS Flash Memory Devices Based on Charge Retention Model

전하보유모델에 기초한 SONOS 플래시 메모리의 전하 저장층 두께에 따른 트랩 분석

  • Song, Yu-min (Chungnam National University, Department of Electronics Engineering) ;
  • Jeong, Junkyo (Chungnam National University, Department of Electronics Engineering) ;
  • Sung, Jaeyoung (Chungnam National University, Department of Electronics Engineering) ;
  • Lee, Ga-won (Chungnam National University, Department of Electronics Engineering)
  • Received : 2019.12.23
  • Accepted : 2019.12.27
  • Published : 2019.12.31
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Abstract

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

Keywords

References

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