• Title/Summary/Keyword: Transresistance

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The Novel Low-Voltage High-Gain Transresistance Amplifier Design (새로운 구조의 저전압 고이득 트랜스레지스턴스 증폭기 설계)

  • Kim, Byoung-Wook;Bang, Jun-Ho;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2257-2261
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    • 2007
  • A new CMOS transresistance amplifier for low-voltage analog integrated circuit design applications is presented. The proposed transresistance amplifier circuit based on common-source and negative feedback topology is compared with other recent reported transresistance amplifier. The proposed transresistance amplifier achieves high transresistance gain, gain-bandwidth with the same input/output impedance and the minimum supply voltage $2V_{DSAT}+V_T$. Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS technology was performed and achieved $59dB{\Omega}$ transresistance gain which is above the maximum about $18dB{\Omega}$ compared to transresistance gain of the reported circuit.

Realization of n-th Order Voltage Transfer Function Using a Single Operational Transresistance Amplifier

  • Kilinc, Selcuk;Cam, Ugur
    • ETRI Journal
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    • v.27 no.5
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    • pp.647-650
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    • 2005
  • A new configuration to realize the most general n-th order voltage transfer function is proposed. It employs only one operational transresistance amplifier (OTRA) as the active element. In the synthesis of the transfer function, the RC:-RC decomposition technique is used. To the best of author's knowledge, this is the first topology to be used in the realization of n-th order transfer function employing single OTRA.

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High-Accuracy Bipolar Transresistance Amplifier (고정도 바이폴라 트랜스레지스턴스 증폭기)

  • 김동용;김종필차형우정원섭
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.667-670
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    • 1998
  • Novel bipolar transresistance amplifier(TRA) for high-accuracy current-mode signal processing is described. The TRA consists of two current follower for the current inputs, a current summer for curent-differential, and a voltage follower for the voltage output. The simulation results show that the impedence of the current input and the voltage output is 0.5 $\Omega$ and the 3-dB cutoff frequency when used as a current to voltage converter extends beyond 40 MHz.

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Operational Characteristics of Superconducting Amplifier using Vortex Flux Flow

  • Lim, Sung-Hun
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.260-264
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    • 2008
  • The operational characteristics of superconducting amplifier using vortex flux flow were analyzed from an equivalent circuit in which its current-voltage characteristics for the vortex motion in YBCO microbridge were reflected. For the analysis of operation as an amplifier, dc bias operational point for the superconducting amplifier is determined and then ac operational characteristics for the designed superconducting amplifier were investigated. The variation of transresistance, which describes the operational characteristics of superconducting amplifier, was estimated with respect to conditions of dc bias. The current and the voltage gains, which can be derived from the circuit for small signal analysis, were calculated at each operational point and compared with the results obtained from the numerical analysis for the small signal circuit. From our paper, the characteristics of amplification for superconducting flux flow transistor (SFFT) could be confirmed. The development of the superconducting amplifier applicable to various devices is expected.

A Design of Bipolar Transresistance Amplifiers (바이폴라 트랜스레지스턴스 증폭기 설계)

  • Cha, Hyeong-U;Im, Dong-Bin;Song, Chang-Hun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.11
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    • pp.828-835
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    • 2001
  • Novel bipolar transresistance amplifier(TRA) and its offset-compensated TRA for high-performance current-mode signal processing are described. The TRA consist of two current follower for a current inputs, a current summer for the current-difference, a resistor for the current to voltage converter, and a voltage follower for the voltage output. The offset-compensated TRA adopts diode-connected npn and pnp transistor to reduce offset voltage in the TRA. The simulation results show that the TRA has impedance of 0.5 Ω at the input and the output terminal. The offset voltages at these terminals is 40 mV The offset-compensated TRA has the offset voltage of 1.1 mV and the impedance of 0.25 Ω. The 3-dB cutoff frequency is 40 MHz for the two TRA's when used as a current to voltage converter with unit-gain transresistance. The power dissipation is 11.25 mW.

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A Design of Improved Current Subtracter and Its Application to Norton Amplifier (개선된 전류 감산기와 이를 이용한 노튼(Norton) 증폭기의 설계)

  • Cha, Hyeong-Woo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.82-90
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    • 2011
  • A novel class AB current subtracter(CS) and its application to Norton amplifier(NA) for low-power current-mode signal processing are designed. The CS is composed of a translinear cell, two current mirrors, and two common-emitter(CB) amplifiers. The principle of the current subtraction is that the difference of two input current applied translinear cell get from the current mirror, and then the current amplify through CB amplifier with ${\beta}$ times. The NA is consisted of the CS and wideband voltage buffer. The simulation results show that the CS has current input impedance of $20{\Omega}$, current gain of 50, and current input range of $i_{IN1}$ > $i_{IN2}{\geq}4I_B$. The NA has unit gain frequency of 312 MHz, transresistance of 130 dB, and power dissipation of 4mW at ${\pm}2.5V$ supply voltage.

A Comparative Analysis of I-V Characteristics in a single Channel Superconducting Flux Flow Transistor (단일채널 고온초전도 자속흐름 트랜지스터의 I-V 특성 비교분석)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Choi, Myong-Ho;Lee, Jong-Hwa;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.107-110
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    • 2003
  • We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.

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