Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
- /
- Pages.107-110
- /
- 2003
A Comparative Analysis of I-V Characteristics in a single Channel Superconducting Flux Flow Transistor
단일채널 고온초전도 자속흐름 트랜지스터의 I-V 특성 비교분석
- Ko, Seok-Cheol (Jeonbuk National Univ.) ;
- Kang, Hyeong-Gon (Jeonbuk National Univ.) ;
- Lim, Sung-Hun (Jeonbuk National Univ.) ;
- Choi, Myong-Ho (Gwangju Health College) ;
- Lee, Jong-Hwa (Jeonbuk National Univ.) ;
- Han, Byoung-Sung (Jeonbuk National Univ.)
- 고석철 (전북대 전자정보공학부) ;
- 강형곤 (전북대 반도체물성연구소) ;
- 임성훈 (전북대 전자정보공학부) ;
- 최명호 (광주보건대학 의료정보공학부) ;
- 이종화 (전북대 전자정보공학부) ;
- 한병성 (전북대 전자정보공학부)
- Published : 2003.07.10
Abstract
We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.