• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.455-460
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• 2005

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.106-109
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• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.62-68
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• 2000

Ultra thin TiN films (50∼700nm thickness) were deposited on AISI 304 stainless steel substrates using a reactive DC magnetron sputtering deposition process to investigate their wear and friction properties. Dry sliding wear tests of the films were carried out against hardened steel and alumina counterparts using a pin-on-disk type wear tester at room temperature. Variation of friction coefficient was measured as a function of film thickness, load, sliding speed and roughness of the substrate. Worn surfaces of the film were examined by a scanning electron microscope. Wear resistance of the TiN film increased with the increase of the film thickness. The TiN film showed relatively high wear resistance in spite of its ultra thin thickness when it is mated by the steel counterpart, while it showed poor wear resistance with the alumina counterpart. The good wear resistance with the steel counterpart was explained by the formation of oxide layers on the film surface and sound interface character between the ultra thin film and the substrate.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.2
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• pp.210-225
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• 2004

Statement of problem: Implant screw loosening has been remained problem in restorative practices. Surface treatment of screw plays a role of preventing screw from loosening in implant screw mechanism. Purpose : The purpose of this study was to investigate surface characteristics of TiN and ZrN film ion plated screw with titanium and gold alloy screw and to evaluate wear resistance, surface roughness, and film adhesion on screw surface using various instruments. Material and methods : GoldTite screws and titanium screws provided by 3i (Implant Innovation, USA) and TorqTite screws or titanium screws by Steri-Oss (Nobel Biocare, USA) and gold screws and titanium screws by AVANA (Osstem Implant, korea) were selected. Ion plating which is much superior to other surface modification techniques was carried out for gold screws and titanium screws using Ti and Zr coating materials with nitrogen gas. Ion nitrided surface of each abutment screw was observed with field emission scanning electron microscopy (FE-SEM, micro-diamond scratch tester, vickers hardness tester, and surface roughness tester. Results : 1) The surface of gold screw and GoldTite is more smooth than ones of other kinds of non coated screw. 2) The ZrN and TiN coated surface is the more smooth than ones of other kinds of screw. 3) The hardness of TiN and ZrN coated surface showed higher than that of non coated surface. 4) The TiN coated titanium screw and ZrN coated gold screw have a good wear resistance and adhesion on the surface. 5) The surface of ZrN coated screw showed low surface roughness compared with the surface of TiN coated screw. Conclusion : It is considered that the TiN and ZrN coated screw which would prevent a screw from loosening can be applicable to implant system and confirmed that TiN and ZrN film act as lubricant on surface of screw due to decrease of friction for recycled tightening and loosening.

• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.17-25
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• 1989

The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.514-519
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• 2017

TiN (titanium nitride) films were prepared using the RF magnetron sputtering technique. The films were deposited by pure $N_2$ plasma sputtering. Their mechanical properties, such as nano-indentation hardness, friction coefficient, and surface wettability, have been investigated. X-ray diffraction (XRD) studies revealed that the orientation of $TiN_X$ films changed towards the (111) orientation with decreasing working pressure due to a strong compressive stress during deposition. The strongest TiN (111) orientation was found when the film was deposited at a working pressure of 1 Pa. This film showed the largest hardness (16 GPa) and smallest friction coefficient (0.17) among the studied samples. Moreover, this film was found to be accompanied by a water-repellent surface with water contact angle more than $100^{\circ}$.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.