Browse > Article
http://dx.doi.org/10.4313/TEEM.2011.12.3.106

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma  

Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University)
Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
Publication Information
Transactions on Electrical and Electronic Materials / v.12, no.3, 2011 , pp. 106-109 More about this Journal
Abstract
We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.
Keywords
Titanium nitride; $BCl_3$/Ar; Inductively coupled plasma; Etch; X-ray photoelectron spectroscopy;
Citations & Related Records

Times Cited By SCOPUS : 0
연도 인용수 순위
  • Reference
1 E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Vallier, O. Joubert, and T. Lill, J. Vac. Sci. Technol. B 25, 1640 (2007) [DOI: 10.1116/1.2781550].   DOI   ScienceOn
2 J. F. Marco, A. C. Agudelo, J. R. Gancedo, and D. Hanzel, Surf. Interface Anal. 27, 71 (1999) [DOI: 10.1002/(sici)1096-9918(199902)27:2<71::aid-sia469>3.0.co;2-g].   DOI
3 S. Eminente, S. Cristoloveanu, R. Clerc, A. Ohata, and G. Ghibaudo, Solid-State Electron. 51, 239 (2007) [DOI: 10.1016/j.sse.2007.01.016].   DOI   ScienceOn
4 J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai, J. Vac. Sci. Technol. B 21, 2163 (2003) [DOI: 10.1116/1.1612517].   DOI   ScienceOn
5 S. Tabara, Jpn. J. Appl. Phys. 36, 2508 (1997) [DOI: 10.1143/JJAP.36.2508].   DOI
6 C. B. Labelle, H. L. Maynard, and J. T. C. Lee, J. Vac. Sci. Technol. B 14, 2574 (1996) [DOI: 10.1116/1.588770].   DOI   ScienceOn
7 K. B. Jung, H. Cho, Y. B. Hahn, D. C. Hays, E. S. Lambers, Y. D. Park, T. Feng, J. R. Childress, and S. J. Pearton, J. Electrochem. Soc. 146, 1465 (1999) [DOI: 10.1149/1.1391787].   DOI   ScienceOn
8 X. Li, L. Ling, X. Hua, G. S. Oehrlein, Y. Wang, and H. M. Anderson, J. Vac. Sci. Technol. A 21, 1955 (2003) [DOI: 10.1116/1.1619420].   DOI   ScienceOn
9 X. Yang, D. P. Kim, G. H. Kim, J . C. Woo, D. S. Um, and C. I . Kim, Ferroelectrics 384, 39 (2009) [DOI : 10.1080/00150190902892741].   DOI   ScienceOn
10 D. P. Kim, X. Yang, J. C. Woo, D. S. Um, and C. I. Kim, J. Vac. Sci. Technol. A 27, 1320 (2009) [DOI: 10.1116/1.3244567].   DOI   ScienceOn
11 S. K. Rha, W. J. Lee, S. Y. Lee, Y. S. Hwang, Y. J. Lee, D. I. Kim, D. W. Kim, S. S. Chun, and C. O. Park, Thin Solid Films 320, 134 (1998) [DOI: 10.1016/s0040-6090(97)01077-8].   DOI
12 W. S. Hwang, J. Chen, W. J. Yoo, and V. Bliznetsov, J. Vac. Sci. Technol. A 23, 964 (2005) [DOI: 10.1116/1.1927536].   DOI   ScienceOn
13 M. H. Shin, S. W. Na, N. E. Lee, and J. H. Ahn, Thin Solid Films 506-507, 230 (2006) [DOI: 10.1016/j.tsf.2005.08.019].   DOI   ScienceOn
14 S. H. Kim and J. G. Fossum, Solid-State Electron. 49, 595 (2005) [DOI: 10.1016/j.sse.2004.12.004].   DOI   ScienceOn
15 G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003) [DOI: 10.1063/1.1558223].   DOI   ScienceOn
16 S. A. Vitale, J. Kedzierski, and C. L. Keast, J. Vac. Sci. Technol. B 27, 2472 (2009) [DOI: 10.1116/1.3253533].   DOI   ScienceOn
17 S. Mukhopadhyay, K. Keunwoo, W. Xinlin, D. J. Frank, P. Oldiges, C. Ching-Te, and K. Roy, IEEE Electron Device Lett. 27, 284 (2006) [DOI: 10.1109/LED.2006.871540].   DOI   ScienceOn