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Electrical Properties of DC Sputtered Titanium Nitride Films with Different Processing Conditions and Substrates

  • Jin, Yen (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Young-Gu (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Jong-Ho (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Do-Kyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Published : 2005.07.01

Abstract

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

Keywords

References

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