• Korean Journal of Fisheries and Aquatic Sciences
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• v.23 no.4
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• pp.280-288
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• 1990

Quality stability of dried lavers during roasting and storage was investigated by measuring the changes of pigment contents including chlorophyll a, carotenoids and biliproteins, the content of trypsin indigestible substrates(TIS), in vitro apparent protein digestibility, and dietary fiber. In heat treatment or roasting of dried laver, carotenoids and chlorophyll a were found to be more stable than biliproteins. Chlorophyll a and carotenoids were retained more than $85\%$ during roasting for 1 hour at $120^{\circ}C$ while biliproteins were retained only $10\%$ at the same temperature. The in vitro digestility of dried layers tended to increase with raising the roasting temperature. The in vitro digestibility of $85\%$ for the roasted laver at $100^{\circ}C$ was higher than that observed in the control of $80\%$. There was a correlation between the decrease in TIS and biliproteins as the laver was roasted. The soulble dietary fiber(SDF) content was substantially increased by heat treatment. The extent of protein digestiblility appeared to be related to the increase of SDF content. In the storage of roasted lavers under both water activities 0.1 and 0.65, the loss of the pigments and TlS were markedly retarded at Aw 0.1. Chlorophyll a was retained about $20\%$ at aw 0.65 and $75\%$ at aw 0.1 after 20 week sto-rage. At worst, more than $90\%$ of the carotenoids were lost at aw 0.65 after 20 week, while biliproteins were comparatively stable at the same water activity. TIS decreased about $15\%$ and in vitro apparent protein digestibility increased up to $92\%$ at aw 0.65 during storage.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Journal of the Korean Society of Food Science and Nutrition
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• v.14 no.1
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• pp.1-12
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• 1985

In an attempt todetermine the optimum heat treatment, the changes in TIS content and in vitro protein digestibility of squid, shrimp, oysterand pollock under various heating conditions were studied. The effect of drying method and cold storage on the in vitro digestibility and TIS content were also studied. Optimal boiling conditions were 1 min, for squid, 0.5min. for oyster(eviscerated), 1 min. for whole oyster, and 5 min. for pollock. Steaming times that yieled products with the highest in vitro digestibility value were: 1 min. at $100^{\circ}C$ for squid, 1 min, at $88^{\circ}C$ for oyster and $1{\sim}2.5min$. at $100^{\circ}C$ for pollock. All of freeze dried samples showed the highest in vitro digestibility value and sundried one were comparble to freeze dried samples except high fat level or noneviscerated samples. Fat content was the nain inhivbitory factor of the seafood enzymic digestion during processing and storage. The multi-enzyme assay, used to predict the quality change of dried seafoods stored in a cold room for long periods of raw seafoods treated with various heating methods, offers many advantages over the convetional methods of determining protein quality.

• Progress in Superconductivity
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• v.5 no.1
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• pp.50-54
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• 2003

We have fabricated $∂^2$$B_{z}$ /$∂x^2$ type planar gradiometers and studied their properties in operation under various field conditions. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ (100) substrate by a pulsed laser deposition (PLD) system and patterned into a device by the photolithography with ion milling technique. The device consists of 3 pickup loops designed symmetrically Inner dimension and the width of the square side loops are 3.6 mm and 1.2 mm, respectively, and the corresponding dimensions of the center loop are 2.0 mm and 1.13 mm. The length of baseline gradiometer is 5.8 mm. Step-edge junction width is 3.0 $\mu\textrm{m}$ and the hole size of the SQUID loop is 3 $\mu\textrm{m}$ ${\times}$ 52 $\mu\textrm{m}$. The SQUID inductance is estimated to be 35 pH. The device was formed on a 20 mm ${\times}$ 10 mm substrate. We have tested the behavior of the device in various field conditions. The unshielded gradiometer was stable under extremely hostile conditions on a laboratory bench. Noise level 0.45 pT/$\textrm{cm}^2$/(equation omitted)Hz and 0.84 pT/$\textrm{cm}^2$/(equation omitted)Hz at 1 Hz for the shielded and the unshielded cases, which correspond to equivalent field noises of 150 fT/(equation omitted)Hz and 280 fT/(equation omitted)Hz, respectively. In spite of the short baseline of 5.8 mm, the high common-mode-rejection-ratio of the gradiometer, $10^3$, allowed us to successfully record magnetocardiogram of a human subject, which demonstrates the feasibility of the design in biomagnetic studies.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.157-162
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• 2016

Porous $Co(OH)_2$ nano-flake thin films were prepared by a potential-controlled electro-deposition technique at various deposition voltage (-0.75, -1.0, -1.2, and -1.4 V) on Ti-mesh substrates for supercapacitor application. The potential of electrode was controlled to regulate the film thickness and the amount of $Co(OH)_2$ nano-flake on the titanium substrate. The film thickness was shown to reach the maximum value of $34{\mu}m$ at -1.4 V of electrode potential, where 17.2 g of $Co(OH)_2$ was deposited on the substrate. The specific discharge capacitances were measured to be 226, 370, 720, and $1008mF\;cm^{-2}$ in the 1st cycle corresponding to the films which were formed at -0.75, -1.0, -1.2, and -1.4 V of electrode potentials, respectively. Then the discharge capacities were decreased to be 206, 349, 586 and $866mF/cm^{-2}$, where the persistency rates were 91, 94, 81, and 86%, respectively.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• Journal of Korean Society for Atmospheric Environment
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• v.13 no.6
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• pp.487-495
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• 1997

The most desirable diesel oxidation catalyst (DOC) should have the properties of oxidizing CO, HC and SOF effectively at low exhaust gas temperature while minimizing the formation of sulfate at high exhaust gas temperature. Precious metals such as platinum and palladium have been known to be sufficiently active for oxidizing SOF and also to have high activity for the oxidation of sulfur dioxide $(SO_2)$ to sulfur trioxide $(SO_3)$. There is a need to develop a highly selective catalyst which can promote the oxidation SOF efficiently, on the other hand, suppress the oxidation of $SO_2$. In this study, a Pt-V catalyst was prepared by impregnating platinum and vanadium onto a Ti-Si wash coated ceramic monolith substrate. A prepared Pt-V catalytic converter was installed on a heavy duty diesel engine and the effect of fuel sulfur on particulate matter (PM) of heavy duty diesel engine was measured. The effect of fuel sulfur on PM of Pt-V was also compared with that of a commercialized Pt catalyst currently being used in some of the heavy duty diesel engines in advanced countries. Only 1 $\sim$ 3% of sulfur in the diesel fuel was converted to sulfate in PM for the engine without catalyst, but almost 100% of sulfur conversion was achieved for the engine with Pt catalyst at maximum loading condition. In the case of Pt-V catalyst, there was no big difference in conversion with the base engine even at maximum loading condition. The reason of SOF increase according to the increase of suflate emission was identified as the washing off effect of bound water in sulfate.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.