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http://dx.doi.org/10.4191/KCERS.2006.43.2.106

Effect of Post-Annealing on the Microstructure and Electrical Properties of PMN-PZT Films Prepared by Aerosol Deposition Process  

Hahn, Byung-Dong (Department of Future Technology, Korea Institute of Machinery and Materials)
Ko, Kwang-Ho (Division of Materials Science and Engineering, Pukyong National University)
Park, Dong-Soo (Department of Future Technology, Korea Institute of Machinery and Materials)
Choi, Jong-Jin (Department of Future Technology, Korea Institute of Machinery and Materials)
Yoon, Woon-Ha (Department of Future Technology, Korea Institute of Machinery and Materials)
Park, Chan (Division of Materials Science and Engineering, Pukyong National University)
Kim, Doh-Yeon (School of Materials Science and Engineering, Seoul National University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.2, 2006 , pp. 106-113 More about this Journal
Abstract
PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.
Keywords
PMN-PZT films; Aerosol deposition process; Post-annealing process; Electrical Properties;
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