Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Pressure Sensing Properties of Al1-xScxN Thin Films Sputtered at Room Temperature

상온에서 성막한 고감도의 Al1-xScxN 박막의 압력 감지 특성

  • Seok, Hye-Won (Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Sei-Ki (Korea Institute of Ceramic Engineering and Technology) ;
  • Kang, Yang-Koo (Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Young-Jin (Korea Institute of Ceramic Engineering and Technology) ;
  • Hong, Yeon-Woo (Korea Institute of Ceramic Engineering and Technology) ;
  • Ju, Byeong-Kwon (Department of Electrical Engineering, Korea University)
  • Received : 2014.09.25
  • Accepted : 2014.12.02
  • Published : 2014.11.30
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Abstract

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

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References

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