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http://dx.doi.org/10.5369/JSST.2014.23.6.420

Pressure Sensing Properties of Al1-xScxN Thin Films Sputtered at Room Temperature  

Seok, Hye-Won (Korea Institute of Ceramic Engineering and Technology)
Kim, Sei-Ki (Korea Institute of Ceramic Engineering and Technology)
Kang, Yang-Koo (Korea Institute of Ceramic Engineering and Technology)
Lee, Young-Jin (Korea Institute of Ceramic Engineering and Technology)
Hong, Yeon-Woo (Korea Institute of Ceramic Engineering and Technology)
Ju, Byeong-Kwon (Department of Electrical Engineering, Korea University)
Publication Information
Journal of Sensor Science and Technology / v.23, no.6, 2014 , pp. 420-424 More about this Journal
Abstract
Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.
Keywords
Piezoelectric; AlN thin film; Pressure sensor; RF reactive sputtering; Room temperature deposition;
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