• Journal of the Korean Ceramic Society
• /
• v.41 no.8
• /
• pp.593-598
• /
• 2004

To make the all-solid-state lithium thin film battery having less than 1 fm in thickness, LiCoO$_2$ thin films were deposited on Pt/TiO$_2$/SiO$_2$/Si substrate as a function of Li/Co mole ratio and the deposition temperature by Pulsed Laser Deposition (PLD). Especially, LiCoO$_2$ thin films deposited at 50$0^{\circ}C$ with target of Li/Co=1.2 mole ratio show an initial discharge capacity of 53 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 67.6％. The microstructural and electrochemical properies of (Li, La)TiO3 thin films grown on LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si structures by Pulsed Laser Deposition (PLD) were investigated at various deposition temperatures. The thin films grown at 10$0^{\circ}C$ show an initial discharge capacity of approximately 51 $\mu$Ah/cm$^2$-$\mu$m and moreover show excellent discharge capacity retention of 90％ after 100 cycles. An amorphous (Li, La)TiO$_3$ solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium thin film battery below 1 $\mu$m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.7
• /
• pp.415-418
• /
• 2015

In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.475-475
• /
• 2014

Dye sensitized solar cells (DSSCs) are regarded as potential inexpensive alternatives to conventional solid-state devices. The flexible version, employing conductive-plastic-film substrates, is appealing for commercialization of DSSCs because it not only reduces the weight and cost of the device but also extends their applications. However, the need for high temperature does not permit the use of plastic-film substrate. So, development of low-temperature methods is therefore realization of flexible DSSCs. In this work, the electrophoretic deposition combined with hydrothermal treatment was employed to prepare nanocrystalline $TiO_2$ thin film at low temperature. We confirmed the prepared $TiO_2$ thin films with different voltages and deposition times in the electrophoretic deposition process. Properties of the $TiO_2$ films were investigated by various analysis method such as X-ray diffraction, field emission scanning electron microscopy (FESEM) and UV-visible spectrophotometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.2
• /
• pp.105-108
• /
• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.2
• /
• pp.427-430
• /
• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.2
• /
• pp.70-75
• /
• 2006

As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.121-124
• /
• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.189-193
• /
• 1997

(S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.67-69
• /
• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• Tribology and Lubricants
• /
• v.4 no.2
• /
• pp.36-43
• /
• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.