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http://dx.doi.org/10.4313/JKEM.2005.18.2.105

Enhancement of the Ferroelectric Properties of Pb(La1Ti)O3 Thin Films with Pb(La1Ti)O3Buffers Fabricated by Pulsed Laser Deposition  

Lim, Sung-Hoon (연세대학교 전기전자공학과)
Lee, Eun-Sun (연세대학교 전기전자공학과)
Chung, Hyun-Woo (연세대학교 전기전자공학과)
Jeon, Kyung-Ah (연세대학교 전기전자공학과)
Lee, Sang-Yeol (연세대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.2, 2005 , pp. 105-108 More about this Journal
Abstract
The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.
Keywords
Pulsed laser deposition; PLT buffer; Remanent polarization; Coercive field;
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