• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.230-238
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• 2000

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A ∝ H$\^$${\alpha}$/ with ${\alpha}$=0.03∼0.05 at low sweep rates and 0.33-0.40 at high sweep rates. For the 150 ${\AA}$ Fe/InAs(001) film, ${\alpha}$ is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of ${\alpha}$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity H$\sub$c/ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (∼100 $\mu\textrm{m}$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.142-142
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• 2003

The effects of film thickness on the dipolar relaxation of ferroelectric PbTiO$_3$ films were investigated in the microwave-frequency range. The dielectric constants ($\varepsilon$) and the dielectric losses (tan $\delta$) were successfully measured up to 30 ㎓ using interdigital capacitors. The PbTiO$_3$ thin films were deposited on the quartz substrate at room temperature and postannealed in oxygen atmosphere. As the film thickness increased, its grain size and tetragonality were enhanced. And the dipolar relaxation behavior began to appear in the thin films with approximately 20 nm thickness, since ferroelectric domains could not be formed hi small grains. The observed relaxation frequency (above 10 ㎓) was higher than the previous values reported in bulk ceramics. It can be correlated with the extremely small domain size of the thinfilms as shown by TEM. And, the Rayleigh constant [1] from domain wall motions was alsoinvestigated by LCR meter at 100 KHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 추계학술발표대회 논문집
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• pp.194-197
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• 2005

In this work, a mixed beam approach is performed to identify the transverse shear behavior of thin-walled composite beams with closed cross-sections. The analytical model includes the effects of elastic couplings, shell wall thickness, and torsion warping. The distributions of shear flow across the section as well as the shear correction coefficients are obtained in a closed form in the beam formulation. The influence of transverse shear deformation on the static behavior of closed cross-section composite beams is also investigated in the analysis

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2003년도 춘계학술발표대회 논문집
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• pp.95-98
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• 2003

In this work, a closed-form analysis is performed to obtain the stiffness coefficients of thin-walled composites beams with elliptical profiles. The analytical model includes the effects of elastic couplings, shell wall thickness, torsion warping and constrained warping. Reissner's semi-complementary energy functional is used to derive the beam force-displacement relations. The theory is validated against MSC/NASTRAN results for coupled composites beams with single-cell elliptical sections. Very good correlation has been noticed for the test cases considered.

• 센서학회지
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• 제16권4호
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1333-1335
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• 1997

We have made disperse diazo black D(DBD) thin films using Langmuir-Blodgett(LB) and vacuum-evaporation technique. Physical and optical properties of the films were investigated. Solution was made with a concentration of $10^{-3}mol/{\ell}$ using chloroform. Moving wall apparatus, (NL-LB140S-MWC) was employed to make the LB films. X,Y and Z-type LB films were manufactured and studied UV/visible absorbance spectra and morphology of surface using atomic force microscopy(AFM). Vacuum-evaporated DB D thin films were made at a pressure of $10^{-5}$ torr. The absorption peaks were observed at 200 and 400 nm in the LB films and vacuum-deposited films. We have also studied photoluminescence spectrum of the DBD films.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1998년도 춘계학술발표회논문집(1)
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• pp.553-558
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• 1998

The calibrating method for an electrochemical Probe, neglecting the effect of the normal velocity on the mass transport, can cause large errors when applied to the measurement of wall shear rates in thin wavy flow with large amplitude waves. An extended calibrating method is developed to consider the contributions of the normal velocity. The inclusion of the turbulence-induced normal velocity term is found to have a negligible effect on the mass transfer coefficient. The contribution wave-induced normal velocity can be classified on the dimensionless parameter V. If V above a critical value of V, $V_{crit}$, the effects of the wave-induced normal velocity become larger with an increase in V. IF V its effects negligible for V < $V_{crit}$. The unknown shear rate is numerically determined by solving the 2-D mass transport equation inversely. The president inverse method can predict the unknown shear rate more accurately in thin wavy flow with large amplitude waves than the previous method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.47-49
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• 1988

This paper discusses dynamic properties of bubble garnet thin films. The dynamic properties considered are Gilbert damping parameters, saturation velocity, and wall mobility. The parameters are evaluated to facilitate the search for desirable garnet thin film compositions. Given bubble diameter and Q-value, the computer prints out all compositions which meet the desired requirements. The computer model determines magnetization, anisotropy, damping, velocity, mobility among others from the film compositions. The computer modeling program is described by an algorithm detailing its operation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.299-302
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• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.