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http://dx.doi.org/10.5369/JSST.2007.16.4.313

Properties of CNT field effect transistors using top gate electrodes  

Park, Yong-Wook (Dept. of Electronic Eng. Namseoul University)
Yoon, Seok-Jin (Thin Film Material Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.16, no.4, 2007 , pp. 313-318 More about this Journal
Abstract
Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.
Keywords
CNTFETs; MOSFET; CVD; conductance; nanoelectronic;
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