Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Properties of CNT field effect transistors using top gate electrodes

탑 게이트 탄소나노튜브 트랜지스터 특성 연구

  • Park, Yong-Wook (Dept. of Electronic Eng. Namseoul University) ;
  • Yoon, Seok-Jin (Thin Film Material Research Center, Korea Institute of Science and Technology)
  • 박용욱 (남서울대학교 전자공학과) ;
  • 윤석진 (한국과학기술연구원 박막재료연구센터)
  • Published : 2007.07.31
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Abstract

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

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References

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