• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년도 학술대회
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• pp.221-226
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• 2008

Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년 추계학술대회논문집
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• pp.221-226
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• 2008

Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The level-set method for tracking the liquid-gas interface is extended to treat the immersed (or irregular-shaped) solid surface. The no-slip condition at the fluid-solid interface as well as the matching conditions at the liquid-gas interface is accurately imposed by incorporating the ghost fluid approach based on a sharp-interface representation. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.1-7
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• 2005

저항 값을 맞추기 위한 트리밍 공정이 낮은 저항온도계수와 높은 정밀성을 요구하는 박막저항기 특성에 미치는 영향에 대한 연구가 수행되었다. 스퍼터링 방법으로 제조된 박막 저항기의 트리밍 속도에 따른 저항기의 특성 변화와 온도계수의 변화가 관찰되었다. 트리밍 속도의 증가에 따라서 박막 저항기 특성은 저하되었으며, 열처리로 저항 값의 평균 편차 $0.26\%$ 및 저항온도계수 52.77(ppm/K)의 개선효과가 있었다. 1k$\Omega$와 10k$\Omega$저항기가 100k$\Omega$ 박막저항기 보다는 특성이 양호하였으며, 트리밍 속도의 치적 조건으로는 20mm/sec와 특성 개선을 할 수 있는 최적 열처리 온도는 593K였으며 최적 조건에서 제작된 저항기의 저항 값의 평균 편차는 $0.31\%$ 및 저항온도계수 10(ppm/K)미만이었다.

• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.49-53
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• 2018

최근 유연 소자, 투명 소자, MEMS 소자와 같은 다양한 소자를 결합하는 시스템 집적화 기술이 많이 개발되고 있다. 이러한 다종 소자 시스템 제조 기술의 핵심 공정은 칩 또는 웨이퍼 레벨의 접합 공정, 기판 연삭 공정, 그리고 박막 기판 핸들링 기술이라 하겠다. 본 연구에서는 Si 기판 연삭 공정이 투명 박막 트랜지스터나 유연 전극 소재로 적용되는 산화주석 박막의 전기적 성질에 미치는 영향을 분석하였다. Si 기판의 두께가 얇아질수록 Si d-spacing은 감소하였고, Si 격자 내에 strain이 발생하였다. 또한, Si 기판의 두께가 얇아질수록 산화주석 박막 내 캐리어 농도가 감소하여 전기전도도가 감소하였다. 얇은 산화 주석 박막의 경우 전기전도도는 두꺼운 산화 주석 박막보다 낮았으며 Si 기판의 두께에 의해 크게 변하지 않았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1396-1397
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• 2006

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature haying an effect on the quality of the thin film was changed from $100[^{\circ}C]$ to $300[^{\circ}C]$ at intervals of $50[^{\circ}C]$.

• Current Optics and Photonics
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• 제1권5호
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• pp.505-513
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• 2017

Measuring the thickness of thin films is strongly required in the display industry. In recent years, as the size of a pattern has become smaller, the substrate has become larger. Consequently, measuring the thickness of the thin film over a wide area with low spatial sampling size has become a key technique of manufacturing-yield management. Interferometry is a well-known metrology technique that offers low spatial sampling size and the ability to measure a wide area; however, there are some limitations in measuring the thickness of the thin film. This paper proposes a method to calculate the thickness of the thin film in the following two steps: first, pre-estimation of the thickness with the phase at the peak position of the interferogram at the bottom surface of the thin film, using white-light phase-shift interferometry; second, accurate correction of the measurement by fitting the interferogram with the theoretical pattern through the estimated thickness. Feasibility and accuracy of the method has been verified by comparing measured values of photoresist pattern samples, manufactured with the halftone display process, to those measured by AFM. As a result, an area of $880{\times}640$ pixels could be measured in 3 seconds, with a measurement error of less than 12%.

• 한국항행학회논문지
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• 제17권5호
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• pp.574-580
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• 2013

본 논문에서는 박막코팅기술의 공정은 고경도 박막과 질화층의 접합력을 높이기 위하여 적용하였다. 이 박막코팅기술은 프레스 금형에 사용되는 경도와 인성을 얻을 수 있는 복합 박막을 형성했다. 이러한 박막 코팅 생산 기술은 물리증착방법을 이용하여 진공 챔버의 진공도를 증가하고, 건파워의 투사율을 향상시켰다. 티타늄합금 타겟은 각종 정밀가공 부품에 복합박막코팅기술 개발을 통하여 성능과 표면재질을 개선하였다.

• 한국기계가공학회지
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• 제20권9호
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• pp.84-89
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• 2021

Indium tin oxide (ITO) transparent electrodes, which are used to manufacture organic light-emitting diodes, are used in light-emitting surface electrodes of display EL panels such as cell phones and TVs, liquid crystal panels, transparent switches, and plane heating elements. ITO is a major component that consists of indium and tin and is advantageous in terms of obtaining sheet resistance and light transmittance in a thin film. However, the optical performance of devices decreases with an increase in its thickness. A digital holography system was constructed and measured for the step measurement of the ITO thin film, and the reliability of the technique was verified by comparing the FE-SEM measurement results. The error rate of the step difference measurement was within ±5%. This result demonstrated that this technique is useful for applications in advanced MEMS and NEMS industrial fields.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.600-605
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1370-1375
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• 2004

This article investigates the heat transfer characteristics in a RTA system for LCD manufacturing and suggests a way to evaluate the quality of a poly-Si film from the thin film optics analysis. The transient and one-dimensional conductive/radiative heat transfer equation considering wave interference effect is solved to predict surface temperatures of thin films. In dealing with radiative heat transfer, a one-dimensional two-flux method is used and the ray tracing method is also utilized to account for the wave interference effects. It is assumed that each interface is assumed diffusive but the spectral radiative properties are included. It is found that the selective heating region exists for various wavelengths and consequently may contribute to heat the poly-Si film. Using the formalism of the characteristic transmission matrix, the lumped structure reflectance, transmittance, and absorptance are calculated and they are compared with experimental data of the poly-Si film during the SPC process via the FE-RTA (Field-Enhanced RTA) technology.