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http://dx.doi.org/10.4313/JKEM.2007.20.7.600

A Study on Properties of CuInSe2 Thin Films by Substrate Temperature and Annealing Temperature  

Yang, Hyeon-Hun (목포대학교 전기공학과)
Jeong, Woon-Jo (목포대학교 전기공학과)
Park, Gye-Choon (목포대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.7, 2007 , pp. 600-605 More about this Journal
Abstract
Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.
Keywords
Ternary compound; $CuInSe_2$; Thin film; Solar cell;
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