• 한국산학기술학회논문지
• /
• 제20권6호
• /
• pp.9-13
• /
• 2019

본 연구에서는 박막 패턴의 히터를 반도체 공정 기술을 이용하여 소형 백금 박막 히터를 실리콘 기판 상에 제작하고 박막히터의 인가전압, 전력, 온도의 열특성을 측정 분석하였다. 박막 패턴 히터의 온도는 전력 증가에 따라서 증가하였으나 높은 전력구간에서는 온도 증가율이 완만해지는 결과를 확인하였다. 백금 박막 패턴 히터의 고온구간의 특성은 측정 환경에 의한 영향으로서 대기분위기와 진공분위기에서 측정한 결과를 열저항 모델을 이용하여 열특성을 해석하였다. 진공분위기에서 측정한 경우가 열저항값 0.79 [K/mW]로서 대기분위기에서의 열저항 값 0.69 [K/mW]보다 높게 측정되었다. 대기분위기보다는 진공분위기에서 낮은 전력으로 박막 패턴 히터의 온도를 유지할 수 있었고 이들 결과는 박막 패턴 히터 소자의 구조 설계에 활용이 기대된다.

• 한국전산유체공학회:학술대회논문집
• /
• 한국전산유체공학회 2009년 춘계학술대회논문집
• /
• pp.315-320
• /
• 2009

A computational investigation is conducted on free convection from a thin plate having a surface heat source. The thermal configuration simulates the recently-proposed transparent film heater made of a single-walled carbon nanotube film on a glass substrate. The Navier-Stokes computations are carried out to study laminar free convection from the heater. Parallel numerical experiments are performed by using a simplified design analysis model which solve the conduction equation with the boundary conditions utilizing several existing correlations for convective heat transfer coefficient. Comparison leads to the most suitable boundary condition for the thermal model to evaluate the performance evaluation of a transparent thin-film heater.

• 마이크로전자및패키징학회지
• /
• 제14권3호
• /
• pp.57-64
• /
• 2007

Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.176.2-176.2
• /
• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• 한국전기전자재료학회논문지
• /
• 제18권8호
• /
• pp.714-719
• /
• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• 한국전기전자재료학회논문지
• /
• 제13권7호
• /
• pp.612-616
• /
• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

• 한국진공학회지
• /
• 제12권3호
• /
• pp.168-173
• /
• 2003

유리 기판 위에 증착된 비정질 실리콘 박막의 고상 결정화에 대한 새로운 방법을 제시하였다. 비정질 실리콘 박막의 하부에 패턴 된 다양한 크기의 $TiSi_2$ 박막을 전기저항 가열 방식으로 가열함으로서 비정질 실리콘이 고상 결정화 되도록 하였다. 박막히터를 이용한 열처리는 매우 빠른 열처리 공정으로써, 일반적인 로에 의한 열처리에 비해 매우 낮은 thermal budget을 가지므로, 유리기판 위에서도 고온 열처리가 가능하다는 장점을 가진다. 본 연구에서는 500 $\AA$의 비정질 실리콘 박막을 약 $850^{\circ}C$ 이상의 높은 온도에서 수 초 내에 결정화 할 수 있음을 보였으며, 열처리 조건의 변화에 따른 영향과 지역선택성의 장점을 보였다.

• 센서학회지
• /
• 제19권3호
• /
• pp.197-201
• /
• 2010

This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on polycrystalline 3C-SiC thin film of operation in harsh environments. The sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating power of 13.5 mW ($300^{\circ}C$) is 0.875 in NO gas concentration of 0.046 ppm. In the case of Pt doping, the sensitivity of at power consumption of 5.9 mW ($250^{\circ}C$) was 1.92 at same gas flow rate. The ZnO with doped Pt was showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film. The NO gas sensor integrated SiC micro heater is more strength than others in high voltage and temperature environments.

• 한국전기전자재료학회논문지
• /
• 제14권8호
• /
• pp.658-662
• /
• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• 동력기계공학회지
• /
• 제10권1호
• /
• pp.71-76
• /
• 2006

This paper aims to study several type heaters which are mica heater, film heater, quartz heater and rod heater and to get an temteraturel and electrical characteristics. These four type heaters have a merit in many fields than present electric heater with nichrome wire. Carbon and mica plate heater have higher heat efficiency and less electromagnetic waves. Also it has been reported that far infrared ray emission from this heater is good for our health. Additionally heating element is thin and lighter plate. For these reasons, they will be widely used to various application such as room-heating or manufacturing goods. Experimental result confirmed that when 220V current authorized, the temperature, electric current, electric power and the resistance rise to stationary state in early stage. Moreover, the temperatures and electric characteristics show a good stability.