• Progress in Superconductivity
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• v.11 no.1
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• pp.36-41
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• 2009

Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

• Journal of Sensor Science and Technology
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• v.13 no.1
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• pp.35-40
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• 2004

A thin-film multijunction thermal converter was fabricated through the process using 6 inch silicon wafer semiconductor process and bulk micromachining. Evanohm R alloy and chromel-constantan were used as a heater and thermocouple materials, respectively. The temperature coefficient of resistance of Evanohm R heater was about 75.12 ppm/$^{\circ}C$ and the voltage sensitivity of the thermal converter indicated about 5.75 mV/mW in air. The transfer differences, measured by FRDC-DC method in the frequency range from 20 Hz to 10 kHz, showed the value under about 1.36 ppm, 0.83 ppm for the film thickness of 500, 200 nm, respectively. And in case of a 200 nm-thick thermal converter, the AC-DC transfer differences seems to be stabilized below the value of 1 ppm in the frequency range from 1 kHz to 500 kHz.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.373-378
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• 1999

White light scanning interferometry is increasingly used for precision profile metrology of engineering surfaces, but its current application is primarily limited to opaque surfaces with relatively simple optical reflection behaviors. In this paper, a new attempt is made to extend the interferometric method to the thickness profile measurement of transparent thin film layers. An extensive frequency domain analysis of multiple reflection is performed to allow both the top and bottom interfaces of a thin film layer to be measured independently at the same time using nonlinear least squares technique. This rigorous approach provides not only point-by-point thickness probing but also complete volumetric film profiles digitized in three dimensions.

• Current Optics and Photonics
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• v.1 no.1
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• pp.29-33
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• 2017

A method for analysis of thin film thickness in spectroscopic reflectometry is proposed. In spectroscopic reflectometry, there has been a trade-off between accuracy and computation speed using the conventional analysis algorithms. The trade-off originated from the nonlinearity of spectral reflectance with respect to film thickness. In this paper, the spectral phase is extracted from spectral reflectance, and the thickness of the film can be calculated by linear equations. By using the proposed method, film thickness can be measured very fast with high accuracy. The simulation result shows that the film thickness can be acquired with high accuracy. In the simulation, analysis error is lower than 0.01% in the thickness range from 100 nm to 4 um. The experiments also show good accuracy. Maximum error is under $40{\AA}$ in the thickness range $3,000-20,000{\AA}$. The experiments present that the proposed method is very fast. It takes only 2.6 s for volumetric thickness analysis of 640*480 pixels. The study suggests that the method can be a useful tool for the volumetric thickness measurement in display and semiconductor industries.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.37-45
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• 1999

For the purpose of reducing the output voltage fluctuation of thin film multijunction thermal converter, EVANOHM alloy-S and chromel-alumel thermocouple were used as a thin film heater material and as a thermoelement of thrmopile, respectively. The temperature coefficient of the resistance of thin film EVANOHM alloy-S heater was about $1.4 {\times} 10^4/^{\circ}C$, which is very small compared to other materials, and thin film chromel-alumel thermocouple showed relatively small difference of the Seebeck coefficients about $38 {\mu}V/K$. The output voltage fluctuation of the thermal converter was about 0.06% for the initial 120 seconds in air and decreased considerably after preheating for 5 minutes or more. The respective AC-DC voltage and current transfer error ranges of the thermal converter were about ${\pm}$1.6 ppm and ${\pm}$0.7 ppm in the frequency range from 10Hz to 10 kHz and increased remarkably below 10 Hz or above 10 kHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.6
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• pp.15-21
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• 2004

반도체 제조산업과 나노, 바이오 산업의 비약적 발전에 따라 게이트 산화막(gate oxide)과 같이 반도체 제조공정에서 사용되는 유전체 박막(dielectric film)의 두께는 수 $\mu\textrm{m}$에서 수 nm 에 이르기까지 다양할 뿐 아니라 얇아지고 있으며, 또한 이러한 박막들이 다층으로 복잡하게 적층된 다층 박막의 응용이 높아지는 추세이다. 따라서, 반도체 및 광통신 소자, 발광소자, 바이오 칩 어레이 등과 같은 나노박막을 이용하는 산업에서는 박막의 두께 측정을 더욱 정확하고, 보다 빠르며 효율적으로 측정할 수 있는 박막 두께 측정용 계측기가 요구된다.(중략)

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.34-52
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• 2004

Over the past decade the experimental technique of THz time domain spectroscopy (㎔- TDS) has proved to be a versatile method for investigating a wide range of phenomena in the ㎔ or far infrared spectral region from 100 ㎓ to 5 ㎔. This paper reviews some recent results of the Ultrafast ㎔ Research Group at Oklahoma State University using ㎔-TDS as a characterization tool. The experimental technique is described along with recent results on ㎔ beam propagation and how ㎔ beam profiles arise from propagation of pulse fronts along caustics. To illustrate how spatio-temporal electric field measurements can determine material properties over a wide spectral range, propagation of ㎔ pulses through systems exhibiting frustrated total internal reflection (FTIR) are reviewed. Finally two potential metrology applications of ㎔-TDS are discussed, thin film characterization and non-destructive evaluation of ceramics. Although ㎔-TDS has been confined to the research laboratory, the focus on application may stimulate the adoption of ㎔- TDS for industrial or metrology applications.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.288-296
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• 2000

Thin-film chromel-alumel multijunction thermal converters with a low output resistance of $64{\sim}85\;{\Omega}$ showed approximately the square law-dependent input-output relation. The voltage responsivities were very low with $0.34{\sim}0.67\;V/W$ in air and $1.15{\sim}1.48\;V/W$ in vacuum, respectively, and the ac-dc voltage transfer error was very large with about +340 ppm in the frequency range of $40\;Hz{\sim}10\;kHz$ in the case of 1 V-input sinewave rms voltage. It can be concluded that the large transfer error of the thermal converter was mainly caused by the low voltage responsivity and the large heat loss due to low output resistance, which implies that the optimization for small ac-dc transfer error is required.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.705-710
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• 2015

The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp³ content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K₃[Fe(CN)₆] in 0.5 M Na₂SO₄ demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.