Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.141-141
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- 2010
The effect of thermal anneal on luminescence and photovoltaic characteristics of B doped silicon-rich silicon-nitride thin films on n-type Si substrate
- Seo, Se-Young (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kim, In-Yong (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Hong, Seung-Hui (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kim, Kyung-Joong (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS))
- Published : 2010.02.17
Abstract
The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to
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