• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.845-852
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• 2011

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processing conditions. The compact/target(?) has a diameter of ${\Phi}150{\times}6.35mm$. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a $Si/SiO_2$ substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below $40{\mu}m$, respectively. The specific resistivity of the optimized Ti target was $8.63{\times}10^{-6}{\Omega}{\cdot}cm$.

• Solar Energy
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• v.11 no.1
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• pp.41-49
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• 1991

In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{\pm}5[5^{\circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{\mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{\circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{\times}1[cm^2]$ cell.

• Nano
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• v.13 no.10
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.4
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• pp.100-108
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• 2019

In this paper, a new stacked element pressure sensor has proposed for heartbeat and respiration measurement. This device can be directly attached to an individual's chest; heartbeat and respiration are detected by the pulsatile vibration and deformation of the chest. A key feature of the device is the simultaneous measurement of heart rate and respiration. The structure of the sensor consists of two stacked elements, in which one element includes one polyvinylidene fluoride (PVDF) thin film bonded on polydimethylsiloxane (PDMS) substrate. In addition, for the measurement and signal processing, the electric circuit and the filter are simply constructed with an OP-amp, resistance, and a capacitor. One element (element1, PDMS) maximizes the respiration signal; the other (element2, PVDF) is used to measure heartbeat. Element1 and element2 had sensitivity of 0.163V/N and 0.209V/N, respectively, and element2 showed improved characteristics compared with element1 in response to force. Thus, element1 and element2 were optimized for measuring respiration heart rate, respectively. Through mechanical and vivo human tests, this sensor shows the great potential to optimize the signals of heartbeat and respiration compared with commercial devices. Moreover, the proposed sensor is flexible, light weight, and low cost. All of these characteristics illustrate an effective piezoelectric pressure sensor for heartbeat and respiration measurements.

• Journal of Advanced Navigation Technology
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• v.23 no.5
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• pp.415-423
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• 2019

In this paper, a design method for a high-sensitivity microstrip patch sensor antenna (MPSA) loaded with a bent-slot was studied for the permittivity measurement. The bent-slot similar to a single-ring complementary split ring resonator was added along a radiating edge of the patch in order to enhance the sensitivity to the permittivity. The sensitivity of the proposed MPSA was compared with that of a conventional rectangular MPSA and a thin rectangular-slotted MPSA. Three MPSAs were designed and fabricated on a 0.76-mm-thick RF-35 substrate so that the input reflection coefficient would resonate at 2.5 GHz in the absence of the superstrate under test. When five different Taconic substrates with a relative permittivity ranging from 2.17 to 10.2 were used as the superstrate under test, experiment results show that the sensitivity of the proposed MPSA, which is measured by the shift in the resonant frequency of the input reflection coefficient, is 4.1 to 6.1 times higher than that of the conventional MPSA.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.747-754
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• 2008

Recently, the requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. Therefore, it is important to examine the surface state of substrate depending on the processing parameter during the anodic oxidation. This study investigated the effect of the various electrolyte concentrations on anodizing of titanium anode prior to copper electrodeposition. Different surface morphology of anodized titanium was obtained at different electrolytic concentration 0.5 M to 3.0 M. In addition, the effect that the surfaces and the electrical characteristics on the electrodeposited copper layer was observed. In this study, surface anodized in the group containing 0.5M $H_2SO_4$ shows more uniform copper crystals with low surface roughness. the surface roughness and sheet resistance for 0.5M $H_2SO_4$ group were $1.353{\mu}m$ and $0.104m{\Omega}/sq$, respectively.

• Journal of Convergence for Information Technology
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• v.11 no.3
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• pp.167-173
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• 2021

There is an increasing interest in manufacturing various electronic devices on a bendable substrate. In this paper, we observed a surface morphology by annealing for 20 minutes at temperatures of 150 ℃, 350 ℃, and 550 ℃, respectively, with samples coated by chromium and aluminum. Data on surfaces are investigated using high-resolution SEM and AFM that can measure roughness up to nm. There is no difference from the sample without heat treatment up to 350 ℃, but the change of crystal grains can be observed at 550 ℃. In the future, for application to the flexible optoelectronic field, additional characteristics such as electrical conductivity and reflectivity will be analyzed and optical devices will be manufactured. In conclusion, we will explore the possibility of applying metal materials to flexible electronic devices.

• Journal of the Korea Convergence Society
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• v.13 no.3
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• pp.197-202
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• 2022

The CZTS solar cell is a thin film solar cell using an absorption layer composed of Cu, Zn, Sn, Se, and S, and is cheaper than a CIGS solar cell using In and Ga and more eco-friendly than a perovskite and CdTe solar cell using Pb and Cd. In this study, we conducted a bending test for flexible CZTS solar cells. Experiments were conducted in the direction of inner benidng with compressive stress and outer bending with tensile stress, and during the number of bending 1,000 times with a radius of curvature of 50 mmR, the efficiency of the solar cell decreased by up to 12.7%, and the biggest cause of efficiency reduction in both directions was a large decrease in parallel resistance.