• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1146-1150
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• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1051-1059
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• 1988

In this study, we developed a proto-type RTP equipment by using tungsten halogen lamps. The system has been designed utilizing the result of the numerical analysis of the reactor. In order to analyze the system performance, experiments for activation of implanted atoms and oxidation process were performed. As a result, we obtained 2-3% uniformity in sheet resistance and 2-4% uniformity in oxide thickness, although after a long time process at high temperatures slip lines and warpage of the wafer have been observed.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.29-34
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• 2006

In order to design an OLED(Organic Luminescent Emitting Device) evaporation system, geometric simulation of film thickness distribution profile is required. For the OLED evaporation process, thin film thickness uniformity is of great practical importance. In this paper, a geometric modeling algorithm is introduced for process simulation of the OLED evaporating process. The physical fact of the evaporating process is modeled mathematically. Based on the developed method, the thickness of the thin-film layer can be successfully controlled.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.1-7
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• 2012

Electroplating technology is widely used in semiconductor microelectronic industry. With the development of semiconductor integrated circuit to high density and light-small scale, Extremely high quality and plated uniformity of the deposited metals are needed. Simulation technique can help to obtain better plating results. Although a few plating simulation softwares have been commercialized, plating simulation is not widely prevalent in Korea. In this paper, principle of electroplating and mathematical modeling of plating simulation are discussed. Also introduced are some cases enhancing plating thickness uniformity on leadframe, PCB and wafer by using plating simulation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.359-364
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• 2000

The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.

• Journal of Surface Science and Engineering
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• v.41 no.6
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• pp.279-286
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• 2008

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.134-135
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• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• Nuclear Engineering and Technology
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• v.49 no.4
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• pp.776-780
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• 2017

To avoid imaging artifacts and interpretation mistakes, an improvement of the uniformity in gamma camera systems is a very important point. We can expect excellent uniformity using cadmium zinc telluride (CZT) photon counting detector (PCD) because of the direct conversion of the gamma rays energy into electrons. In addition, the uniformity performance such as integral uniformity (IU), differential uniformity (DU), scatter fraction (SF), and contrast-to-noise ratio (CNR) varies according to the energy window setting. In this study, we compared a PCD and conventional scintillation detector with respect to the energy windows (5%, 10%, 15%, and 20%) using a $^{99m}Tc$ gamma source with a Geant4 Application for Tomography Emission simulation tool. The gamma camera systems used in this work are a CZT PCD and NaI(Tl) conventional scintillation detector with a 1-mm thickness. According to the results, although the IU and DU results were improved with the energy window, the SF and CNR results deteriorated with the energy window. In particular, the uniformity for the PCD was higher than that of the conventional scintillation detector in all cases. In conclusion, our results demonstrated that the uniformity of the CZT PCD was higher than that of the conventional scintillation detector.