A Study on the Nitride Residue and Pad Oxide Damage of Shallow Trench Isolation(STI)-Chemical Mechanical Polishing(CMP) Process

STI-CMP 공정의 질화막 잔존물 및 패드 산화막 손상에 대한 연구

  • Published : 2001.09.01

Abstract

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

Keywords

References

  1. J. Jui, 'Scaling limitation of submicron LOCOS technology,' Tech. Dig. IEDM, p.392, 1985
  2. P. Sallagoity, F. Gaillard, M. Rivoire, M. Paoli and F. Martin, 'STI process steps for sub-quarter micron CMOS,' Microelectron. Reliability, Vol. 38, No. 2, pp. 271-276, 1998 https://doi.org/10.1016/S0026-2714(97)00166-2
  3. 김상용, 서용진, 김태형, 이우선, 김창일, 장의구, 'Chemical Mechanical Polishing(CMP) 공정을 이용한 Multilevel Metal 구조의 광역 평탄화에 관한 연구,' 한국전기전자재료학회 논문지, Vol. 11, No. 12, pp. 1084-1090, 1998
  4. K. Smekalin, 'CMP dishing effects in shallow trench isolation,' Solid State Technology, pp. 187-194, 1997
  5. 서용진, 정헌상, 김상용, 이우선, 이강현, 장의구, 'STI-CMP 공정에서 Torn oxide 결함 해결에 관한 연구,' 한국전기전자재료학회 논문지, Vol. 14, No. 1, pp. 1-5, 2001
  6. 김상용, 서용진, 이우선, 장의구, '실리콘 웨이퍼 위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성,' 한국전기전자재료학회 논문지, Vol. 13, No. 2, pp. 131-136, 2000
  7. 서용진, 김상용, 이우선, 장의구, 'STI-CMP 공정을 위한 pattern wafer와 blanket wafer 사이의 특성 연구,' 한국전기전자재료학회 춘계학술대회 논문집, pp. 211-213, (99. 5. 28)
  8. Sang-Yong Kim, et al., 'Study of chemical mechanical polishing on shallow trench isolation to obtain low defect,' Electrochemical Society Proceedings. Vol. 99-2, pp. 215-219, 1999
  9. C.P. Chang et al., 'A Highly Manufacturable Corner Rounding Solution for 0.18um Shallow Trench Isolation,' IEDM Tech. Dig., pp. 661-664, 1997
  10. H.W. Chiou and L.J. Chen, 'Optimum-Oriented Pad Control of Chemical Mechanical Polish Non-Uniformity,' CMP-MIC conference, pp. 285-288, Feb. 1998
  11. Nagahara et al., 'The effect of slurry particle size on defect levels for a BPSG CMP process,' VMIC conference, pp. 443, Jun., 1996