Proceedings of the KSME Conference (대한기계학회:학술대회논문집)
- 2000.11b
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- Pages.359-364
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- 2000
Numerical Analysis of Silicon Deposition in CVD Reactor
화학기상 성장법에 의한 실리콘 부착에 관한 수치해석
- Published : 2000.11.02
Abstract
The fluid flow, heat transfer and the local mass fi-action of chemical species in the chemical vapor deposition(CVD) manufacturing process are numerically studied. The deposition of silicon from dilute silane is hydrogen carrier gas in a horizontal CVD reactor is investigated. The effect of inlet carrier gas velocity, mass fraction of silane, susceptor angle on the deposition thickness and uniformity was represented.
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