• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.298-304
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• 2003

IPMC(Ionic Polymer-Metal Composite) is a highly sensitive actuator that shows a large deformation in presence of low applied voltage. Generally, IPMC can be fabricated by electroless plating of platinum on both sides of a Nafion (perfluorosulfonic acid) film. When a commercial Nafion film is used as a base structure of the IPMC membrane, the micro-pump structure and the IPMC membrane are fabricated separately and then later assembled, which makes the fabrication inefficient. Therefore, fabrication of an IPMC membrane and the micro-pump structure on a single wafer without the need of assembly have been developed. The silicon wafer was partially etched to hold liquid Nafion to be casted and a 60-${\mu}{\textrm}{m}$ thick IPMC membrane was realized. IPMC membranes with various size were fabricated by casting and they showed 4-2${\mu}{\textrm}{m}$ displacements from $4mm{\times}4mm$ , $6mm{\times}6mm$, $8mm{\times}8mm$ membranes at the applied voltage ranging from 2Vp-p to 5Vp-p at 0.5Hz. The displacement of the fabricated IPMC membranes is fairly proportional to the membrane area and the applied voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.289-291
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• 2003

This paper deals with the design of a spiral micro inductor using LTCC(Low Temperature Cofired Ceramics) technology. The inductors using the LTCC technology have some prominent properties of high integration of circuits, high confidence and low cost comparing with previously fabricated thick-film inductors. In this paper, we designed a new spiral-type micro inductor comprising a magnetic material to improve the inductance and leakage flux. we, in addition, presented the simulation results for various shapes of the magnetic material in the micro inductor, Finally application of the micro inductor to the boost DC-DC converter is investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.926-929
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• 2003

The dissolved oxygen sensor of thick film type was fabricated by screen print method and measured the characteristic, reference electrode used Ag/AgCl, and working electrode used Pt. The devices are continuously powered at potential of $0.7V{\sim}0.8V$ versus Ag/AgCl reference electrode and results indicated that the response characteristic of sensor was $1.002{\mu}A{\sim}19.792{\mu}A$ for thirty seconds. we can know that it is good linearity when compared with of existent dissolved oxygen meter. Therefore sensor fabricated excels sensitivity for dissolved oxygen and will be considered to be applied typically because the price is costly.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.1
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• pp.9-13
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• 1982

The purpose of this experiment is to evaluate the noise dependency on the gate dimensions of the P-ch MOSFET which is fabricated of p+ sourse, drain, and gate electrode doped with PH$_3$ gas in type-N Si sudstrate. Experimental results indicate that: for the constant gate area and reletively thick films, noise level tends to decrease for the W/L ratio over unity, which generally conforms with theoretical observations, but its variation with the change in the thickness of film is less than the theoretically predicted for the W/L ratio below unity.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.497-504
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• 2009

DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. Different deposition method such as arc plating, ion gun plating and PECVD were used for comparing mechanical and tribological properties of each DLCs deposited on stainless steel with 1 um thick respectively. Among these 3 types of DLCs, the arc plated DLC film showed highest value for wear resistance in dry condition. From the results of analysis for physical properties of DLC films, it seems that the adhesion force and crack initiation modes were more important factors than intrinsic mechanical properties such as hardness, elastic modulus and/or roughness to the wear resistance of DLC films. Raman spectroscopy was used for understanding chemical bonding natures of each type of DLC films. Typical D and G peaks were identified based on the deposition method. Hardness of the coating layers were identified by nanoindentation method and the adhesions were checked by scratch method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.1
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• pp.7-11
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• 2002

A novel microstrip type law-pass filter using thin or thick film resistors is proposed to efficiently eliminate harmonic spurious response in stop-band. The proposed low-pass filter shows the spurious suppression enhancement of 20 dB over a conventional one. The designed low-pass filter could be used as a harmonic rejection filter of a local oscillator for Ku-band satellite payload system.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1303_1304
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• 2009

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device. The made 31type triple-morph cantilever was resulted from the conditions of $100k{\Omega}$, 0.25g, 154Hz respectively. The thick film was prepared at the condition of 6.57Vrms, and its power was $432.31{\mu}W$ and its thickness was $50{\mu}m$. And than, the fabricated piezoelectric cantilever was packaged for application.