• 한국재료학회지
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• 제21권10호
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• pp.542-545
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• 2011

Half-Heusler alloys are a potential thermoelectric material for use in high-temperature applications. In an attempt to produce half-Heusler thermoelectric materials with fine microstructures, TiCoSb was synthesized by the mechanical alloying of stoichiometric elemental powder compositions and then consolidated by vacuum hot pressing. The phase transformations during the mechanical alloying and hot consolidation process were investigated using XRD and SEM. A single-phase, half- Heusler allow was successfully produced by the mechanical alloying process, but a minor portion of the second phase of the CoSb formation was observed after the vacuum hot pressing. The thermoelectric properties as a function of the temperature were evaluated for the hot-pressed specimens. The Seebeck coefficients in the test range showed negative values, representing n-type conductivity, and the absolute value was found to be relatively low due to the existence of the second phase. It is shown that the electrical conductivity is relatively high and that the thermal conductivities are compatibly low in MA TiCoSb. The maximum ZT value was found to be relatively low in the test temperature range, possibly due to the lower Seebeck coefficient. The Hall mobility value appeared to be quite low, leading to the lower value of Seebeck coefficient. Thus, it is likely that the single phase produced by mechanical alloying process will show much higher ZT values after an excess Ti addition. It is also believed that further property enhancement can be obtained if appropriate dopants are selectively introduced into this MA TiCoSb System.

• 한국재료학회지
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• 제32권6호
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• pp.287-292
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• 2022

Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg_3.8-xZn_xSb₂ (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.89-94
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• 2022

고체상태에서 열에너지과 전기에너지를 직접적이고 가역적으로 변환할 수 있는 열전소재는 전기전도특성인 전기전도도 및 제벡계수와 열전도특성인 열전도도에 의해 그 성능이 결정된다. 하지만 전기전도도, 제벡계수, 열전도도는 소재의 조성, 결정구조 및 전자구조에 의해 결정되며, 서로 상관관계를 나타내기 때문에 성능 증대를 위한 효과적인 전략수립에 어려움이 있다. 본 논문에서는 열전소재의 성능과 관련한 수식에 대한 이해를 바탕으로 실험 결과와 연계하여 열전도도 저감 관점에서 효과적인 결함제어 기반 열전소재 성능 증대 전략을 수립할 수 있는 방법론을 제공하고자 한다.

• 도시과학
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• 제9권1호
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• pp.1-6
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• 2020

The thermoelectric characteristics of alkali activated slag composites containing multi-walled carbon nanotubes (MWCNT) was investigated in the present study. Three different MWCNT contents and exposed temperatures were considered, and their thermoelectric-related properties and internal structures were analyzed. It was found that the alkali activated slag composite with MWCNT 2.0 wt.% and the exposed temperature of 150℃ were the optimal condition to obtain the highest Seebeck coefficient and power factor. Based on the feasibility study, the extended size thermoelectric module with 130 elements was fabricated, and tested the electricity production capacity. Consequently, the present thermoelectric module produced 30.83 ㎼ of electricity at ∆T=178.4℃.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2007년도 동계학술발표대회 논문집
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• pp.640-645
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• 2007

An experimental apparatus to show the hot spot cooling of an IC chip using a thermoelectric cooler is developed. The spot heating in very small area is achieved by the applying CO$_2$ laser source and temperatures are measured using miniature thermocouples. The active effects of thermoelectric cooler on the hot spot cooling system such as rapid heat spreading in the chip and lowering the peak temperature around the hot spot region are investigated. The experimental results are simulated numerically using the TAS program, which the performance characteristics such as Seebeck coefficient, electrical resistance and thermal conductivity of the thermoelectric cooler are searched by trial and error. Good agreements are obtained between numerical and experimental results if the appropriate performance data of the thermoelectric cooler are given.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.227-233
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• 2011

The low efficiency of bulk thermoelectric materials has limited the widespread application of thermoelectric power generation. Theoretical and experimental investigations indicate that materials prepared in the form of nanowires show higher thermoelectric coefficients, thus promising to revolutionize the field. This article reviews the basics of thermoelectric power generation, conventional devices, the role of nanowires and the current status of the field.

• 대한금속재료학회지
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• 제46권5호
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• pp.315-320
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• 2008

The effect of Mn additive on the thermoelectric properties of Fe-Si alloys prepared by a RF inductive furnace was investigated. The electrical conductivity and Seebeck coefficient were measured as a function of temperature under Ar atmosphere to evaluate their applicability to thermoelectric energy conversion. The electrical conductivity of the specimens increased with increasing temperatures showing typical semiconducting behavior. The electrical conductivity of Mn-doped specimens are higher than that of undoped specimens and increased slightly with increasing the amount of Mn additive. This must be due to the difference in carrier concentration and the amount of residual metallic phase ${\varepsilon}$-FeSi(The ${\varepsilon}$-FeSi was detected in spite of 100 h annealing treatment at $830^{\circ}C$). And metallic conduction increased slightly with increasing the amount of Mn additive. On the other hand, Mn-doped specimens showed the lower Seebeck coefficient due to metallic phase. The power factor of Mn-doped specimens are higher than that of undoped specimens and would be affected by the electrical conductivity more than Seebeck coefficient.

• 한국분말재료학회지
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• 제22권4호
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• 대한기계학회논문집B
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• 제30권1호
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• pp.41-47
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• 2006

High resolution dopant profiling in semiconductor devices has been an intense research topic because of its practical importance in semiconductor industry. Although several techniques have already been developed. it still requires very expensive tools to achieve nanometer scale resolution. In this study we demonstrated a novel dopant profiling technique with nanometer resolution using very simple setup. The newly developed technique measures the thermoelectric voltage generated in the contact point of the SPM probe tip and MOSFET surface instead of electrical signals widely adopted in previous techniques like Scanning Capacitance Microscopy. The spatial resolution of our measurement technique is limited by the size of contact size between SPM probe tip and MOSFET surface and is estimated to be about 10 nm in this experiment.

• Advances in materials Research
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• 제9권3호
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• pp.171-187
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• 2020

The microstructural evolution of different compositions of Mg-Sn alloys (30%Sn-70%Mg, 40%Sn-60%Mg and 50%Sn-50%Mg) is studied at first to understand the changes observed with change in tin content and deformation conditions. The Mg₂Sn phase increases with increase in tin content and a significant substructure development is found in 50%Sn-50%Mg alloy. The above observation led to further deformation studies on Mg₂Sn based thermoelectric materials with higher tin percentage. The microstructure in terms of Electron backscatter diffraction (EBSD)measurements is studied in detail followed by the determination of thermoelectric properties i.e., Seebeck coefficient and electrical conductivity for both as cast and extruded Mg_(2+x)Sn-Ag alloys. The electrical conductivity of the extruded Mg_(2+x)Sn-.3wt%Ag {x =1} alloy was found to be more than its as cast counterpart while the Seebeck coefficient values remained almost the same.