• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.543-547
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• 2008

In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

• 한국금형공학회:학술대회논문집
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• 2008.06a
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• pp.209-213
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• 2008

In this work, we have proposed a method for calculating the residual stress developed during the PCB thermo-compression bonding precess. Residual stress is the most important factor that causes PCB warpage in accordance with the pattern design. In this work, a single-layed double-sided PCB, which is comprised of the dielectric (FR-4) substrate in the middle and copper cladding on the both top and bottom sides, is considered. A reference temperature, where all stress is free, is calculated by comparing the calculated and measured warapge of a PCB of which copper cladding of the top side is removed. Then, the reesidual stress values is calculated for the double-sided PCB.

• Design & Manufacturing
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• v.14 no.3
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• pp.23-30
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• 2020

Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.98-104
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• 2023

The feasibility of an efficient process proposed for Cu-Cu flip-chip bonding was evaluated by forming a porous Cu layer on Cu pillar and conducting thermo-compression sinter-bonding after the infiltration of a reducing agent. The porous Cu layers on Cu pillars were manufactured through a three-step process of Zn plating-heat treatment-Zn selective etching. The average thickness of the formed porous Cu layer was approximately 2.3 ㎛. The flip-chip bonding was accomplished after infiltrating reducing solvent into porous Cu layer and pre-heating, and the layers were finally conducted into sintered joints through thermo-compression. With reduction behavior of Cu oxides and suppression of additional oxidation by the solvent, the porous Cu layer densified to thickness of approximately 1.1 ㎛ during the thermo-compression, and the Cu-Cu flip-chip bonding was eventually completed. As a result, a shear strength of approximately 11.2 MPa could be achieved after the bonding for 5 min under a pressure of 10 MPa at 300 ℃ in air. Because that was a result of partial bonding by only about 50% of the pillars, it was anticipated that a shear strength of 20 MPa or more could easily be obtained if all the pillars were induced to bond through process optimization.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.63-67
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• 2011

We investigated effects of bonding conditions on the peel strength of rigid printed circuit board (RPCB)/ flexible printed circuit board (FPCB) joints bonded using a thermo-compression bond method, The electrodes on the FPCB were coated with Sn by a dipping process. We confirmed that the bonding temperature and bonding time strongly affected the bonding configuration and strength of the joints. Also, the peel strength is affected by dipping conditions; the optimum dipping condition was found to be temperature of $270^{\circ}C$ and time of 1s. The bonding strength linearly increased with increasing bonding temperature and time until $280^{\circ}C$ and 10s. The fracture energy calculated from the F-x (Forcedisplacement) curve during a peel test was the highest at bonding temperature of $280^{\circ}C$.

• Design & Manufacturing
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• v.13 no.4
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• pp.10-16
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• 2019

Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.929-933
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• 2010

Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.4
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• pp.355-360
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• 2014

Recently, the use of LED is increasing. This paper presents the new package process of thermal compression bonding using metal layered LED chip for the high power LED device. Effective thermal dissipation, which is required in the high power LED device, is achieved by eutectic/flip chip bonding method using metal bond layer on a LED chip. In this study, the process condition for the LED eutectic die bonder system is proposed by using the analysis program, and some experimental results are compared with those obtained using a DST (Die Shear Tester) to illustrate the reliability of the proposed process condition. The cause of bonding failures in the proposed process is also investigated experimentally.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.443-453
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• 2017

In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.