• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Journal of Powder Materials
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• v.28 no.4
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.45-50
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• 2022

Ga₂O₃ thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga₂O₃ thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga₂O₃ films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga₂O₃ films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga₂O₃ film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga₂O₃ thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

• Resources Recycling
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• v.16 no.3 s.77
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• pp.19-26
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• 2007

The bottom ash of municipal solid waste incineration generated during incineration of municipal solid waste in metropolitan area consists of ceramics, glasses, ferrous materials, combustible materials and food waste and so on. Although the ferrous material was separated by the magnetic separation before the incineration process, of which content accounts for about $3{\sim}11%$ in bottom ash. The formation of a $Fe_3O_4-Fe_2O_3$ double layer(similar to pure Fe) on the iron surface was found during air-annealing in the incinerator at $1000^{\circ}C$. A strong thermal shock, such as that takes place during water-cooling of bottom ash, leads to the breakdown of this oxidation layer, facilitating the degradation of ferrous metals and the formation of corrosion products and it existed as $Fe_2O_3,\;Fe_3O_4\;and\;FeS_2$. So, many problems could occur in the use of bottom ash as an aggregate substitutes in construction field. Therefore, in this study, the separation of ferrous materials from municipal solid waste incineration bottom ash was investigated. In the result, the ferrous product(such as $Fe_2O_3,\;Fe_3O_4,\;FeS_2$ and iron) by magnetic separator at 3800 gauss per total bottom ash(w/w.%) accounted for about 18.7%, and 87.7% of the ferrous product was in the size over 1.18 mm. Also the iron per total bottom ash accounted for about 3.8% and the majority of it was in the size over 1.18 mm.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.621-627
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• 1998

The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.