• Journal of the Korean Society of Propulsion Engineers
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• v.21 no.5
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• pp.1-9
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• 2017

The cryogenic nitrogen spray of a swirl injector has been numerically investigated using three dimensional LES turbulence model to analyze the dynamic characteristics under supercritical condition. To predict the precise nitrogen properties under supercritical condition, SRK equation of state, Chung's method for viscosity and thermal conductivity and Takahashi's correlation based on Fuller's theory for diffusion coefficient are implemented. The complex flow structures due to interaction between flow field and acoustic field are observed inside and outside the injector under supercritical condition. FFT, POD, and DMD techniques are employed to understand the coherent structures. By implementing the FFT, the dominant frequencies are identified inside and outside the injector. The coherent flow structures related to the dominant frequencies are visualized using the POD and DMD techniques. In addition, the DMD provides the damping coefficient which is related with the instability prediction.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.579-583
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• 1998

Silicide layer structures, agglomeration of silicide layers, and dopant redistributions for the Co/Ti bilayer sputter-deposited on the P-doped polycrystalline Si substrate and subjected to rapid thermal annealing were investigated and compared with those on the single Si substrate. The $CoSi_2$ phase transition temperature is higher and agglomeration of the silicide layer occurs more severely for the Co/Ti bilayer on the doped polycrystalline Si substrate than on the single Si substrate. Also, dopant loss by outdiffusion is much more significant on the doped polycrystalline Si substrate than on the single Si substrate. All of these differences are attributed to the grain boundary diffusion and heavier doping concentration in the polycrystalline Si. The layer structure after silicidation annealing of Co/ Tildoped - polycrystalline Si is polycrystalline CoSi,/polycrystalline Si, while that of Co/TiI( 100) Si is Co- Ti- Si/epi- CoSi,/(lOO) Si.

• Journal of The Korean Astronomical Society
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• v.45 no.5
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• pp.127-138
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• 2012

We explore how wave-particle interactions affect diffusive shock acceleration (DSA) at astrophysical shocks by performing time-dependent kinetic simulations, in which phenomenological models for magnetic field amplification (MFA), Alfv$\acute{e}$nic drift, thermal leakage injection, Bohm-like diffusion, and a free escape boundary are implemented. If the injection fraction of cosmic-ray (CR) particles is ${\xi}$ > $2{\times}10^{-4}$, for the shock parameters relevant for young supernova remnants, DSA is efficient enough to develop a significant shock precursor due to CR feedback, and magnetic field can be amplified up to a factor of 20 via CR streaming instability in the upstream region. If scattering centers drift with Alfv$\acute{e}$n speed in the amplified magnetic field, the CR energy spectrum can be steepened significantly and the acceleration efficiency is reduced. Nonlinear DSA with self-consistent MFA and Alfv$\acute{e}$nic drift predicts that the postshock CR pressure saturates roughly at ~10 % of the shock ram pressure for strong shocks with a sonic Mach number ranging $20{\leq}M_s{\leq}100$. Since the amplified magnetic field follows the flow modification in the precursor, the low energy end of the particle spectrum is softened much more than the high energy end. As a result, the concave curvature in the energy spectra does not disappear entirely even with the help of Alfv$\acute{e}$nic drift. For shocks with a moderate Alfv$\acute{e}$n Mach number ($M_A$ < 10), the accelerated CR spectrum can become as steep as $E^{-2.1}$ - $E^{-2.3}$, which is more consistent with the observed CR spectrum and gamma-ray photon spectrum of several young supernova remnants.

• Proceeding of Spring/Autumn Annual Conference of KHA
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• 2009.04a
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• pp.175-180
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• 2009

According to an increasing demand of political support and development on renewable energy as a solution for the energy problem in Korea, the government has established a goal to raise renewable energy supply from 2.27% to 5% until 2011. Especially in the case of public building in which energy use is in great demand, it would bring a great advantage to develop and utilize the Photovoltaic System as an electric energy and Geothermal Heat Pump System as a thermal energy. On the occasion of Photovoltaic System, Photovoltaic module can be used as an architectural material so that it can reduce construction cost and when we use solar energy, it is possible to make building's own power supply. As for Geothermal Heat Pump System, It can be used infinitely as long as the solar energy exist and operation cost is cheap and yearly efficiency is stable. However, we need to make a plan to reduce early investment expanses for these two renewable energy systems and to expand a diffusion rate as we develop a competitive domestic technology level. So in this study, we are going to perform evaluation of economical efficiency according to the introduction of Photovoltaic System and Geothermal Heat Pump System in public buildings which will be built up inside of Daegu Sin-seo innovation city. As a first step, we will investigate present installation condition of these two renewable energy systems and based upon that, will seek efficient introduction program of renewal energy systems that can be applied in public buildings.

• Journal of Information Display
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• v.12 no.4
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• pp.209-212
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• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.1
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• pp.24-30
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• 2004

Analysis model for the two-phase catalytic reactor is presented. With the progress in development of micro thermofluidic devices, needs fur understanding of the phenomena in two phase reaction in cm scale has been arisen. To investigate thermal and reactive performance of down scaled two phase reactor simple analysis model that is a kind of lumped flow model is proposed. Analysis model presented is based on the experiment on mm scale model reactor. Target experiment is catalytic decomposition of 70wt％ hydrogen peroxide with existence of perovskite L $a_{0.8}$S $r_{0.2}$Co $O_3$ catalyst. It is composed of balance equations of mass and energy. Each phase is considered to be a species fur the simplicity. Axial diffusion and transversal distribution of properties are neglected. Two phase catalytic reaction is modeled as successive gasification of liquid lump around catalyst and reaction in gas phase. Heat transfer is modeled by model function ofNu number. Modeled Nu is expressed as Nu=N $u_{0}$ (1＋ $a_1$( $a_2$ $T^{-}$ $a_3$)exp( $a_4$ $T^{-1}$)exp( $a_{5}$ z). Transfer coefficients are determined by the comparison of experimental results. With the model, heat transfer characteristics are investigated. Also by the mass transfer coefficient, characteristics in mass transfer is investigated. With the result basic understanding on design and analysis of mm scale two-phase reactive device is obtained. Also it can be further applied to micro scale reactive device fabricated by micromachining.ing..

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.7
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• pp.689-696
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• 2010

The Because of its high thermal efficiency, the direct injection (DI) diesel engine has emerged as a promising potential candidate in the field of transportation. However, the amount of nitrogen oxides ($NO_x$) increases in the local high-temperature regions and that of particulate matter (PM) increases in the diffusion flame region during diesel combustion. In the de-$NO_x$ system the Lean $NO_x$ Trap (LNT) catalyst is used, which absorbs $NO_x$ under lean exhaust gas conditions and releases it in rich conditions. This technology can provide a high $NO_x$-conversion efficiency, but the right amount of reducing agent should be supplied to the catalytic converter at the right time. In this research, the emission characteristics of a diesel engine equipped with a micro-reformer that acts as a reductants-supplying equipment were investigated using an LNT system, and the effects of the exhaust-gas temperature were also studied.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.389-394
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• 1997

The distribution of impurity included in benzene layer crystal was explored in layer crystallization of cyclohexane and benzene mixtures. The influence of crystal growth rate on crystal purity was investigated. All experimental results for bezene-cyclohexane system obtained in layer crystallizer have been evaluated with the criterion of Wintermantel. The purity of crystal decreases with increasing degree of subcooling, decreasing feed concentration and increasing crystal growth rate. The crystal growth rate was a key parameter to determine the inclusion of impurity in crystals. The results obtained from runs performed at increasing crystallization time(i.e. crystal thickness) have clearly shown that migration of inclusions within crystal layer to the melt, leading to the removal of impurity occurs. The diffusion of impurity which takes place during the crystallization from the beginning, enhances a further purification of the crystal layer if that underwent a thermal gradient after growth of the layer crystal stops.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.