• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.7 no.2
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• pp.157-166
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• 1996

This paper presents the optimum termination method of a TEM Cell, which utilizes hybrid distributed termination resistor array networks. Current stream on the septum, and on the terminal end of a TEM Cell is analyzed by numerical analysis. By circuit analysis, the optimum resistor array network is designed based on the result of the analysis, which assures efficient power dissipation, and current stream traveling straight and uniform. Thermovision photos were taken for comparing the conventional termination network on which each resistor is arranged at regular intervals, with the suggested optimum termination network on which each resistor is arranged for current distribution. The comparison of the results of thermovision photos shows a good agreement with those obtained by numerical analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.553-555
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• 2002

We were fabricated of rf power resisotor on AlN substrates by thick film process. The characteristics of capacitance and microwave are measured by digital LCR meter and Network analyzer(HP8532D). The results are shown that capacitances are slight greater and microwave characteristics are good values.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.490-492
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• 2010

A swing level controlled voltage-mode transmitter is proposed to support a stub series-terminated logic channel with center-tapped termination. This transmitter provides a swing level control to support the diagnostic mode and improve the signal integrity in the absence of the destination termination. By using the variable parallel termination, the proposed transmitter maintains the constant output impedance of the source termination while the swing level is controlled. Also, the series termination using an external resistor is used to reduce the impedance mismatch effect due to the parasitic components of the capacitor and inductor. To verify the proposed transmitter, the voltage-mode driver, which provides eight swing levels with the constant output impedance of about $50{\Omega}$, was implemented using a 70nm 1-poly 3-metal DRAM process with a 1.5V supply. The jitter reduction of 54% was measured with the swing level controlled voltage-mode driver in the absence of the destination termination at 1.6-Gb/s.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.269-277
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• 2010

In this paper, the design of a 0.5~2 GHz cavity-backed spiral antenna is described. Combined arm pattern with a log spiral in the inner region and an Archimedean spiral in the outer region, a backing cavity, and a Marchand coaxial balun for feeding are designed. Termination resistors are used to improve antenna characteristics at the lower frequency of the operation frequency. VSWR, axial ratio, gain and HPBW(Half Power Beam Width) characteristics are simulated using CST's MWS. Finally, the validity of these approaches is verified by comparing the simulated results with the measured ones. Also, the measurement results are compared with the performance of a commercial spiral antenna.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.691-694
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• 2005

This paper proposed 10Gbps driver with pre-emphasis for high speed transmitter. the proposed driver increase bandwidth using Ft doubler method and design driver block and pre-emphasis block in together. Pre-emphasis functionality confirmed to control VDS of current source o driver, not to control slew rate of termination resistor. The proposed driver is designed in a 1.5V/0.13um 1-poly, 5-metal CMOS mixed-signal process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.311-312
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• 2008

$RuO_2$ 계열의 후막재료를 사용한 저항의 신뢰성시험을 실시하고 주요 고장 메커니즘을 확인하였다. 사용된 소자의 기판은 AlN 세라믹 기판이며, 후막재료로 $RuO_2$ paste를 프린팅하고 소결시킨 구조의 고주파용 저항(RF Termination)이다. 주요 고장 메커니즘은 후막(Thick Film)의 특성변화, 기판의 특성변화, 전극-후막 간의 접촉특성변화, Trimming 부위의 열화, 열팽창계수 차이에 의한 기계적 파손 등으로 알려져 있으며, 본 실험에서는 고장모드 분석을 위해 과부하시험, 고온동작시험 등을 포함한 신뢰성 환경시험과 수명시험을 실시하였다. 각 시험 결과 수명시험 후 전극-후막 간의 접합부 파괴가 관찰되었고, 열충격 시험 결과 후막의 crack이 관찰되었다.

• Journal of electromagnetic engineering and science
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• v.19 no.1
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• pp.42-47
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• 2019

This paper introduces a modified Wilkinson power divider that uses uniform transmission lines for various terminated impedances and an arbitrary power ratio. For the designed power ratio, the proposed divider changes only the electrical lengths of the transmission lines between the input and output ports, and those between the output ports and the isolation resistor. In this case, even when various termination impedances of the ports exist, the divider characteristics are satisfied. To verify the feasibility of the proposed divider, two circuits were designed to operate at a frequency of 2 GHz with 2:1 and 4:1 power splitting ratios and various terminated impedances of 40, 70, and $60{\Omega}$ for one circuit, and 50, 70, and $60{\Omega}$ for the other. The measurement and simulation results were in good agreement.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.6
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• pp.20-26
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• 2001

In this paper, we design tunnel inner section displacement measurement system which is composed of potentiometer-type displacement sensors, microcontroller-based intelligent sensing head and host computer for the management system and acquisition data. Multiple node communication bus connects the intelligent sensing heads with the host computer. For safe and re1iab1e network operation we use daisy-chain configuration, termination resistor, fail-safe biasing circuit. For tole enhancement of system utilization, we use modbus protocol. The acquisition data are transmitted to host computer and managed by database. Several data request conditions and sorting conditions are provided by management software. The utilization of designed system is confirmed by experiment.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.45 no.2
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• pp.26-36
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• 2008

Due to the differential and low voltage swing, Low Voltage Differential Signaling(LVDS) has been widely used for high speed data transmission with low power consumption. This paper proposes new LVDS I/O interface circuits for more than 1.3 Gb/s operation. The LVDS receiver proposed in this paper utilizes a sense amp for the pre-amp instead of a conventional differential pre-amp. The proposed LVDS allows more than 1.3 Gb/s transmission speed with significantly reduced driver output voltage. Also, in order to further improve the power consumption and noise performance, this paper introduces an inductance impedance matching technique which can eliminate the termination resistor. A new form of unfolded impedance matching method has been developed to accomplish the impedance matching for LVDS receivers with a sense amplifier as well as with a differential amplifier. The proposed LVDS I/O circuits have been extensively simulated using HSPICE based on 0.35um TSMC CMOS technology. The simulation results show improved power gain and transmission rate by ${\sim}12%$ and ${\sim}18%$, respectively.