• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1033-1041
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• 1990

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.5
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• pp.361-369
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• 1991

The optics and the signal processor of dual beam laser Doppler velocimeter(LDV) was fabricated. By using the dual beam and the forward scattering, the optics part of LDV was fabricated. And the signal processor of LDV was designed by the frequency counter type using new 11:6 period timing device in order to remove error signals, and was made of the reference clock of a 500 MHz ECL oscillator. Doppler frequencies from 10KHz to 70MHz can be measured using the signal processor. In the accuracy of the period counting part, from 1.81x10**-4% to 1.27% is estimated, and in the accuracy of the validation logic part, from 0.78% to 14.78% is estimated.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.3
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• pp.9-14
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• 1998

The speech recognition on long vowels are carried out by electric circuits. A level compressor is able to transform the wave of voice to serial pulses. The obtained pulses have informations to distinguish the vowels. The sampling of the pulses is carried out by the register which picks up a series of serial signals in a pitch of a vowel as an unit. The timing control pulses such as sampling pulses are generated by using peak pulses in the speech wave. The parallel data in the register assign the phonetic symbol by means of the decision making circuit which carries out the IF-THEN rule.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.20-32
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• 1997

An optimum parasitic inductance is observed for maximizing the modulation bandwidth of the multiple quantum well (MQW) electro-absorption optical modulator. For 1.1 pF device cpaacitance of the current MQW optical modulator, the optimum parasitic inductances for maximum bandwidth are calculated for different terminating resistors. In ase of 50.ohm. terminating resistor, the 3-dB modulation bandwidth can be increased 45% wider by using the optimum parasitic inductance than nothing parasitic inductance. This calculated optimum inductance can be practically implemented, since the parasitic inductance of bondwires can be accurately analyzed using the method of moments (MoM) and controlled by changing the length and shpae of bondwires.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.2
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• pp.61-70
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• 1997

Human-hand gestures have been used a means of communication among people for a long time, being interpreted as streams of tokens for a language. The signed language is a method of communication for hearing impaired person. Articulated gestures and postures of hands and fingers are commonly used for the signed language. This paper presents a system which recognizes the korean sign language (KSL) and translates the recognition results into a normal korean text and sound. A pair of data-gloves are used a sthe sensing device for detecting motions of hands and fingers. In this paper, we propose a dynamic gesture recognition mehtod by employing a fuzzy feature analysis method for efficient classification of hand motions, and applying a fuzzy min-max neural network to on-line pattern recognition.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.2
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• pp.10-16
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• 1977

Memory switching of the amorphous chalcogenide Ge-Te-Si memory devices were observed at various thicknesses and temperatures. For a given thickness, the distribution of threshold voltages shows a strong peaks, which is attributed to the intrinsic switching mechanism. The plot of Vth versus thickness indicates that threshold voltages were lowered and switching fields were raised as thickness was decreased. And threshold voltage sagged as temperature was raised and the fact that threshold voltage can be lowered at the temperature range under Tg was obtained.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.35-42
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• 1979

A conventional elevator system, which requires simultaneous control of the speed and the position, contains complicated analog hardwares as the control system. Recent advances in LSI technology, however, suggest that the control of such ane levator system may be realized by Incorporating digital device and microcomputer. In this paper, such a possibility is investigated. In this paper, the digital controller, witch is implemented around an IMSAl 8080 microcomputer is designed for the control of model elevator system. Experiments show that this contra .system tracks the given velocity curve as well as it brings the elevator to the enact point.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.24-34
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• 1979

In this paper characteristics of the Ebers-Mull , charge control and Linvill iumped models are reviewed. A 1%eery for systematically modeling solid state device by F.A Lind helm and D. J. Hamilton is discussed in detail. Nonlinear and linear modeds for the junction field effect transistor are derived from the systematic modeling theory. Computer program for the transient analysis is develooped and application of the program to the RC amplifler shows guod results.