Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 27 Issue 4
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- Pages.563-570
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- 1990
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- 1016-135X(pISSN)
A Study on Temperature Compensation of Silicon Piezoresistive Pressure Sensor
실리콘 저항형 압력센서의 온도 보상에 관한 연구
Abstract
A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).
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