Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on Breakdown Voltage of GaAs Power MESFET's

GaAs Power MESFET의 항복전압에 관한 연구

  • 김한수 (삼성전자 반도체사업부 기흥연구소) ;
  • 김한구 (한양대학교 전자공학과) ;
  • 박장우 (한양대학교 전자공학과) ;
  • 기현철 (한양대학교 전자공학과) ;
  • 박광민 (순천향대학교 전자공학과) ;
  • 손상희 (순천향대학교 전산학과) ;
  • 곽계달 (한양대학교 전자공학과)
  • Published : 1990.07.01
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Abstract

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

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