• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.382-385
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• 2003

Chemical mechanical polishing(CMP) is an essential process in the production of copper-based chips. On this work, the stability of Hydrogen Peroxide($H_2O_2$) as oxidizer of Cu CMP slurry has been investigated. $H_2O_2$ is known as the most common oxidizer in Cu CMP slurry. Copper slowly dissolves in $H_2O_2$ solutions and the interaction of $H_2O_2$ with copper surface had been studied in the literature. Because hydrogen peroxide is a weak acid in aqueous solutions, a passivation-type slurry chemistry could be achieved only with pH buffered solution.[1] Moreover, $H_2O_2$ is so unstable that its stabilization is needed using as oxidizer. As adding KOH as pH buffering agent, stability of $H_2O_2$ decreased. However, stability went up with putting in small amount of BTA as film forming agent. There was no difference of $H_2O_2$ stability between KOH and TMAH at same pH. On the other hand, $H_2O_2$ dispersion of TMAH is lower than that of KOH. Furthermore, adding $H_2O_2$ in slurry in advance of bead milling lead to better stability than adding after bead milling. Generally, various solutions of phosphoric acids result in a higher stability. Using Alumina C as abrasive was good at stabilizing for $H_2O_2$; moreover, better stability was gotten by adding $H_3PO_4$.

• 분석과학
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• 제19권5호
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• pp.394-399
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• 2006

본 연구에서는 반도체 웨이퍼 연마 공정에 사용한 산화제와 첨가제의 연마 속도에 미치는 영향과 전기 화학적 특성에 대해 조사하였다. 산화제로는 과산화수소, 질산화 철과 요오드산 칼륨을 사용하였으며, 이들은 연마액의 pH와 종류에 따라 텅스텐 막질에서 상이한 산화반응을 나타내었다. 이러한 차이점은 연마성능에 영향을 끼치며, 과산화수소는 식각반응이 질산화 철과 요오드산 칼륨에서는 부동태 반응이 우세하였다. 그리고 염기성 화합물인 TMAH와 KOH를 연마액에 첨가하였을 때 텅스텐에 대한 전위 에너지 변화 증가 및 연마 제거속도 증가를 확인할 수 있었으며, 제타 전위 값의 절대 값 증가를 통해 분산성 향상에도 도움이 되는 것을 알 수 있었다. 마지막으로 음이온 계면 활성제중 평균 분자량이 25만인 폴리아크릴산을 100 ppm 첨가시 연마 입자의 뭉침 현상이 줄어들면서 분산성 향상에 효과적인 것을 알 수 있었다.

• 청정기술
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• 제28권1호
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• pp.63-78
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• 2022

첨단 전자산업 폐수 처리시설에서 발생되는 유기 폐수는 고농도의 유기물질 및 20가지 이상의 유독 난분해성 물질을 포함하고 있으며, 이를 효율적으로 처리하는 것은 첨단 전자산업의 당면 과제이다. 따라서, 첨단 전자산업 유기폐수 처리시설을 CPS (Cyber physical system)상 Water digital twin으로 구축하여 COD (Chemical Oxygen Demand), TN (Total Nitrogen), TP (Total Phosphorous) 및 TMAH (Tetramethylammonium hydroxide) 등 유기 오염물질의 제거 효율 평가가 가능한 전자산업 폐수 특화 모델 개발이 필요하다. 본 연구에서는 첨단전자산업 유기폐수 제거 메커니즘에 대한 분해 미생물의 성장과 사멸의 이론적인 반응속도식에 기반한 첨단 전자산업 폐수 특화 활성슬러지 모델(Electronics industrial wastewater activated sludge model, e-ASM)을 개발하였다. 개발한 e-ASM은 전자산업 폐수처리공정에서 발생하는 유기물 산화, 질산화, 및 탈질화 과정뿐만 아니라 TMAH 등 난분해성 유기물질의 분해과정 중 발생하는 질산화미생물의 저해(Inhibition) 작용 등 복잡한 생물학적 분해 메커니즘이 모사 가능하다. 이를 활용하여 실제 전자산업 유기폐수 처리시설을 Water Digital Twin으로 구현하여 CPS (Cyber physical system) 상에서 전자산업 폐수처리장에 폐수 유입 성상에 따라 공정 모델링, 유출수 예측, 공법 선정, 설계 효율 평가 등 다양한 목적으로 활용될 수 있다.

• Journal of Information Display
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• 제6권2호
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• pp.19-24
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• 2005

The density controlled carbon nanotubes (CNTs) are grown on the iron acetate nanoparticles by using the freeze-dry method. The iron-acetate [Fe(II)$(CH_3COO)_2$] solution is used to prepare the catalytic iron nanoparticles. The density of CNTs is controlled in order to enhance the field emission process. Furthermore, the patterning of the iron nanoparticle catalyst-layer for the fabrication of electronic devices is simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to form the electron emitter with under-gate type triode structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.274-274
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• 2009

고효율 결정질 실리콘 태양전지 구조를 갖기 위해서는 기본적으로 광포획 기능이 고려된 기판이 고려되어야 한다. 본 실험에서는 2-step 습식공정을 이용하여 기판의 반사율을 기존 대비 절반 이하로까지 줄일 수 있는 저반사율을 갖는 표면구조를 얻을 수 있었다. 일반적인 텍스처링 공정을 NaOH와 TMAH등을 이용하여 10um이하의 피라미드 구조를 통해 평균반사율을 10~13%수준을 얻었고, metal assist etching을 이용하여 추가적인 나노 텍스처링을 적용하였다. 전체적인 2-step에칭을 적용하여 평균 반사율을 5%이하까지 줄일 수 있었다. 이는 전반적으로 나노구조 형성으로 인하여 단파장쪽의 반사율이 적게 나오고 IR 파장쪽의 반사율도 같이 낮아짐으로써 저반사율이 달성되었다. 2-step을 이용한 나노 텍스처링 공정 최적화와 반사방지막을 증착하여 이에 대한 효과를 연구하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.52-57
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• 2005

This paper describes a fabrication method of a circular diaphragm using boron etching stop method. It will be applied to acoustic transducers such as microphones or microspeakers and so on. The sensitivity is expected to be increased with the circular diaphragm through the simulation results to compare with a general rectangular diaphragm. The borondoped layer which is doped with solid source is sufficient for achieving an etching stop in 20 wt% TMAH, and the thickness is about $7.4{\mu}m$. The diameter of the circular silicon nitride diaphragm was measured to be 2 mm with $1{\mu}m$ thickness. The fabrication of piezoelectric acoustic devices was completed.

• 센서학회지
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• 제13권4호
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• pp.264-269
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• 2004

This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3CSiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD, and SEM respectively.

• 대한기계학회논문집A
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• 제33권10호
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1016-1019
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• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate [$Fe(II)(CH_3COO)_2$] solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1455-1458
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• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate $[Fe(II)(CH_3COO)_2]$ solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under-gate type triode structure.