Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
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Fabrication of SiCOI Structures for MEMS Applications in Harsh Environments

극한 환경 MEMS용 SiCOI 구조 제작

  • 정귀상 (동서대학교 메카트로닉스공학과) ;
  • 정연식 (KEC 신소자기술연구소) ;
  • 류지구 (부경대학교 전자공학과)
  • Published : 2004.07.31
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Abstract

This paper describes on an advanced technology of 3C-SiC/Si(100) wafer direct bonding using PECVD oxide to intermediate layer for SiCOI(SiC-on-Insulator) structure because it has an attractive characteristics such as a lower thermal stress, deposition temperature, more quick deposition rate and higher bonding strength than common used poly-Si and thermal oxide. The PECVD oxide was characterized by ATR-FTIR. The bonding strength with variation of HF pre treatment condition was measured by tensile strength measurement system. After etch-back using TMAH solution, roughness of 3CSiC surface crystallinity and bonded interface was measured and analyzed by AFM, XRD, and SEM respectively.

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References

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