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http://dx.doi.org/10.3795/KSME-A.2009.33.10.1023

Effect of Chemical Mechanical Cleaning(CMC) on Particle Removal in Post-Cu CMP Cleaning  

Kim, Young-Min (부산대학교 기계공학부)
Cho, Han-Chul (부산대학교 대학원 기계공학부)
Jeong, Hae-Do (부산대학교 대학원 기계공학부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.33, no.10, 2009 , pp. 1023-1028 More about this Journal
Abstract
Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.
Keywords
Post Cu CMP Cleaning; Chemical Mechanical Cleaning; Colloidal Silica Abrasive;
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Times Cited By KSCI : 1  (Citation Analysis)
Times Cited By SCOPUS : 0
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