• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.5
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• pp.395-403
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• 2006

This paper has proposed a new dead time compensation method for a voltage-fed PMW inverter. In the voltage-fed PMW inverter, a voltage distortion is generated by the dead time effect and the nonlinear characteristics of the switching devices. Especially, the distorted voltage causes 5th and 7th harmonics in the stationary phase currents, and 6th harmonic in the synchronous phase currents. As a result, the integrator output of the synchronous PI current regulator has the ripple corresponding to six times of the inverter output frequency. In this paper, the signal of the integrator output of the d-axis current regulator is used as the control signal for the dead time compensation. The experimental and simulation results are presented to verify the validity of the proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.744-751
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• 2004

This paper presents the implementation of the low cost and high speed RF ATE(Automatic Test Equipment) system, which can be a reasonable solution for reducing the test cost of RF devices. This paper suggests high speed and precise measurement capabilities which are realized by the 16 independent RF ports with high speed switching time and high accuracy digitizer using the industry standard Versus module eXtensions for Instrument(VXI) General Purpose Interface Bus(GPIB) interfaces. Also, the system has the capabilities of quad-site test which can dramatically increase the device throughput. This paper concludes with the demonstration of the implemented ATE system through the setup of RF Power Amplifier Module(PAM), which is under the most competitive market situation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.5
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• pp.371-378
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• 2015

In this paper, a different type of pulse width modulation (PWM) control scheme for a buck converter is introduced. The proposed buck converter uses PWM with frequency hopping and a low quiescent.current low dropout (LDO) voltage regulator with a power supply rejection ratio enhancer to reduce high spurs, harmonics and output voltage ripples. The low quiescent.current LDO voltage regulator is not described in this paper. A three-bit binary-to-thermometer decoder scheme and voltage ripple controller (VRC) is implemented to achieve low voltage ripple less than 3mV to increase the efficiency of the buck converter. An internal clock that is synchronized to the internal switching frequency is used to set the hopping rate. A center frequency of 2.5MHz was chosen because of the bluetooth low energy (BLE) application. This proposed DC-DC buck converter is available for low-current noise-sensitive loads such as BLE and radio frequency loads in portable communications devices. Thus, a high-efficiency and low-voltage ripple is required. This results in a less than 2% drop in the regulator's efficiency, and a less than 3mV voltage ripple, with -26 dBm peak spur reduction operating in the buck converter.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.231-238
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• 2013

This paper describes a DC-DC converter IC for Flat Panel Displays. In case of operate LCD devices various type of DC supply voltage is needed. This device can convert DC voltage from 6~14[V] single supply to -5[V], 15[V], 23[V], and 3.3[V] DC supplies. In order to meet current and voltage specification considered different type of DC-DC converter circuits. In this work a negative charge pump DC-DC converter(-5V), a positive charge pump DC-DC converter(15V), a switching Type Boost DC-DC converter(23V) and a buck DC-DC converter(3.3V). And a oscillator, a thermal shut down circuit, level shift circuits, a bandgap reference circuits are designed. This device has been designed in a 0.35[${\mu}m$] triple-well, double poly, double metal 30[V] CMOS process. The designed circuit is simulated and this one chip product could be applicable for flat panel displays.

• Membrane Journal
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• v.20 no.1
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• pp.8-12
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• 2010

Poly(3,4-ethylenedioxythiophene) (PEDOT), which has the highest stability in conducting polymer was employed to electrochromic (EC) film and studied about electrochromic properties according to the film fabrication method. PEDOT films were coated by two different methods, electropolymerization (EP) and vapor phase polymerization (VPP). Both of PEDOT films showed dark blue color at dedoped neutral state. Spectroelectrochemistry, switching ability and stability of the devices were investigated by UV-Vis Spectrophotometer and Cyclic voltammetry. Surface morphologies of the PEDOT VPP film at oxidized and reduced state were obtained by AFM. The average surface roughness of the PEDOT-VPP film was 50 nm and more homogeneous than that of the PEDOT-EP. The EC property from the PEDOT-VPP film was improved compared to that of the PEDOT-EP film, to show a response time of 1.5 sec, transmittancechange of 49%, and coloration efficiency of 402.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.63-64
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• 2008

Electrokinetic motion of fullerene ($C_{60}$) particles in liquid crystal (LC) medium under an in-plane electric field has been studied for the application to the electronic paper display. Fullerenes move in the direction of applied electric field due to interaction between the induced dipole moment on $C_{60}$ and external electric field at lower threshold voltages compared to other devices such as QR-LPD (Quick Response Liquid Powder Display) and TBD (Twisting Ball Display). We also confirmed the bistability of fullerene particles in LC medium and the results showed that the 87% and 81% of original reflectance or transmittance of image was retained after 24 hours and 48 hours respectively. Our studies show the possibility that fullerenes can be used for electronic paper display.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.8
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• pp.921-926
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• 2015

For the over-heat protection purpose in power strip devices, over-current detection/protection circuits, such as bimetal, switching circuit, and microprocessor-based relay circuit, have been widely setup in high-end products. Most of these circuits are connected to the power line in parallel and, thus, they are sensitive to the line voltage and current distortion. Moreover, these protection circuits are often costly and, therefore, it is hard to meet the commercial requirements. A low-cost over-current detection circuit with the contactless current transducer is designed and tested in this paper. The detection circuit is galvanically isolated from the power line and, thus, less sensitive to the line voltage distortion. The experimental results show that the proposed circuit accurately operates despite of its simple structure and low-cost electronic parts.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• Journal of Electrical Engineering and Technology
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• v.7 no.5
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• pp.765-771
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• 2012

$SF_6$ gas has been used as arc quenching and insulating medium for high and extra high voltage switching devices due to its high dielectric strength, its excellent arc-quenching capabilities, its high chemical stability and non toxicity. Despite of its significant contributions, the gas was classified as one of the greenhouse gas in the Kyoto Protocol. Thus, many researches are conducted to find out the replacement materials and to develop the $SF_6$ gas useless electrical equipment. This paper describes experiments on the temperature change-related breakdown characteristics of $SF_6$ gas ($SF_6$) and $SF_6$ liquid ($LSF_6$) in a model GIS(Gas-Insulated Switchgear) chamber in order to show the possibility of more stable and safe usages of $SF_6$ gas. The breakdown characteristics are classified into three stages, namely the gas stage of $SF_6$ according to Paschen's law, the coexisting stage of $SF_6$ gas with liquid in considerable deviation at lower temperature, and the stage of $LSF_6$ and remaining air. The result shows that the ability of the $LSF_6$ insulation is higher than the high-pressurized $SF_6$. Moreover, it reveals that the breakdown characteristics of $LSF_6$ are produced by bubble-formed $LSF_6$ evaporation and bubbles caused by high electric emission and the corona. In addition, the property of dielectric breakdown of $LSF_6$ is determined by electrode form, electrode arrangement, bubble formation and movement, arc extinguishing capacity of the media, difficulty in corona formation, and the distance between electrodes. The bubble formation and flow separation phenomena were identified for $LSF_6$. It provides fundamental data not only for $SF_6$ gas useless equipment but also for electric insulation design of high-temperature superconductor and cryogenic equipment machinery, which will be developed in future studies.