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DC and RF Characteristics of AlGaN/InGaN HEMTs Grown by Plasma-Assisted MBE  

이종욱 (경희대학교 전파통신공학과)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.15, no.8, 2004 , pp. 752-758 More about this Journal
Abstract
This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.
Keywords
GaN; InGaN; Molecular Beam Expitaxy(MBE); HEMTs;
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1 Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs /
[ A. Chini;D. Buttari;R. Coffie;L. Shen;S. Heikman;A. Chakraborty;S. Keller;U. K. Mishra ] / IEEE Electron Device Lett.   DOI   ScienceOn
2 Performance of the AlGaN HEMT structure with a gate extension /
[ R. Thompson;T. Prunty;V. Kaper;J. R. Shealy ] / IEEE Trans. Electron Devices   DOI   ScienceOn
3 A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate /
[ Y. Ando;Y. Okamoto;H. Miyamoto;N. Hayama;T. Nakayama;K. Kasahara;M. Kuzuhara ] / IEDM Tech. Dig.
4 GaN: processing, defects, and devices /
[ S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren ] / J. Appl. Phys.
5 The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs /
[ B. M. Green(et al.) ] / IEEE Electron Device Lett.   DOI   ScienceOn
6 Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs /
[ I. Daumiller;C. Kirchner;M. Kamp;K. J. Ebeling;E. Kohn ] / IEEE Electron Device Lett.   DOI   ScienceOn
7 A high power and high efficiency GaN HEMT amplifier for W-CDMA base station applications /
[ N. Adachi;N. Hara;K. Joshin;M. Kanamura;T. Kikkawa;M. Nishi;M. Tanaka;Y. Tateno;S. Yokokawa;M. Yokoyama ] / IEEE MTT-S Int. Microwave Symp. Workshop Note
8 Millimeter-wave high-power 0.25-<TEX>${\mu}m$</TEX> gate-length AlGaN/GaN HEMTs on SiC substrates /
[ R. S. Schwindt;V. Kumar;A. Kuliev;G. Simin;J. W. Yang;M. A. Khan;M. E. Muir;I. Adesida ] / IEEE Microwave Wireless Compon. Lett.   DOI   ScienceOn
9 The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs /
[ R. Vetury;N. Q. Zhang;S. Keller;U. K. Mishra ] / IEEE Trans. Electron Devices   DOI   ScienceOn
10 Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures /
[ O. Ambacher;J. Smart;J. R. Shealy;N. G. Wiemann;K. Chu;M. Murphy;W. J. Schaff;L. F. Eastman;R. Dimitrov;L. Wittmer;M. Stutzman;W. Rieger;J. Hilsenbeck ] / J. Appl. Phys.   DOI   ScienceOn
11 Experimental/numerical investigation on current collapse in AlGaN/GaN HEMTs /
[ G. Verzellesi;R. Pierobon;F. Rampazzo;G. Meneghesso;A. Chini;U. K. Mishra;C. Canali;E. Zanoni ] / IEDM Tech. Dig.
12 Undoped AlGaN/GaN HEMTs for microwave power amplification /
[ L. F. Eastman;V. Tilak;J. Smart;B. M. Green;E. M. Chumbes;R. Dimitrov;H. Kim;O. S. Ambacher;N. Weimann;T. Prunty;M. Murphy;W. J. Schaff;J. R. Shealy ] / IEEE Trans. Electron Devices   DOI   ScienceOn
13 Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates /
[ N. G. Weimann;M. J. Manfra;T. Wachtler ] / IEEE Electron Device Lett.   DOI   ScienceOn
14 High-power polarization engineered GaN/AlGaN/GaN HEMTs without surface passivation /
[ L. Shen;R. Coffie;D. Buttari;S. Heikman;A. Chakraborty;A. Chini;S. Keller;S. P. DenBaars;U. K. Mishra ] / IEEE Electron Device Lett.   DOI   ScienceOn
15 Power electronics on InAlN/(In)GaN:Prospect for a record performance /
[ J. Kuzmik ] / IEEE Electron Device Lett.   DOI   ScienceOn
16 Trapping effects and microwave power performance in AlGaN/GaN HEMTs /
[ S. C. Binari;K. Ikossi;J. A. Roussos;W. Kruppa;D. Park;H. B. Dietrich;D. D. Koleske;A. E. Wickenden;R. L. Henry ] / IEEE Trans. Electron Devices   DOI   ScienceOn
17 /
[ Accent Optical Technologies, Inc. ] / DIVA User Manual
18 High performance 0.25 <TEX>${\mu}m$</TEX> gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz /
[ V. Kumar;J. -W. Lee;A. Kuliev;O. Aktas;R. Schwindt;R. Birkhahn;D. Gotthold;S. Guo;B. Albert;I. Adesida ] / Electron. Lett.   DOI   ScienceOn
19 AlGaN/GaN HEMTs on SiC with CW power performance of>4 W/mm and 23% PAE at 35 GHz /
[ C. Lee;P. Saunier;J. Yang;M. A. Khan ] / IEEE Electron Device Lett.   DOI   ScienceOn
20 Device characteristics of the GaN/InGaN-doped channel HFETs /
[ Y. -M. Hsin;H. -T. Hsu;C. -C. Cho;J. -I. Chyi ] / IEEE Electron Device Lett.   DOI   ScienceOn
21 AlGaN/InGaN/GaN double heterostructure field effect transistor /
[ G. Simin;X. Hu;A. Tarakji;J. Zhang;A. Koudymov;S. Saygi;J. Yang;A. Khan;M. S. Shur;R. Gaska ] / Jpn. J. Appl. Phys.   DOI
22 30-W/mm GaN HEMTs by field plate optimization /
[ Y. -F. Wu;A. Saxler;M. Moore;R. P. Smith;S. Sheppard;P. M. Chavarkar;T. Wisleder;U. K. Mishra;P. Parikh ] / IEEE Electron Device Lett.   DOI   ScienceOn
23 AlGaN/GaN HFET amplifier performance and limitations /
[ R. J. Trew ] / IEEE MTT-S Int. Microwave Symp. Digest.
24 Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect /
[ N. Maeda;T. Saitoh;K. Tsubaki;T. Nishida;N. Kobayashi ] / Jpn. J. Appl. Phys.   DOI