• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.1 s.244
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• pp.41-47
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• 2006

High resolution dopant profiling in semiconductor devices has been an intense research topic because of its practical importance in semiconductor industry. Although several techniques have already been developed. it still requires very expensive tools to achieve nanometer scale resolution. In this study we demonstrated a novel dopant profiling technique with nanometer resolution using very simple setup. The newly developed technique measures the thermoelectric voltage generated in the contact point of the SPM probe tip and MOSFET surface instead of electrical signals widely adopted in previous techniques like Scanning Capacitance Microscopy. The spatial resolution of our measurement technique is limited by the size of contact size between SPM probe tip and MOSFET surface and is estimated to be about 10 nm in this experiment.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.79-82
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• 2008

A method is described for ideally reconstructing the profile from a surface profiling measurement containing a reasonable amount of null measurement data. The proposed method can conjecture lost information and rectify irregular data that result due to bad measuring environments, signal transmission noise, or instrument-induced errors, The method adopts the concept of computer graphics and consists of several processing steps. First, a search for valid data in the neighborhood of the null data is performed. The valid data are then grouped and their contours are extracted. By analyzing these contours, a bounding box can be obtained and the general distribution of the entire area encompassing the valid and null data is determined Finally, an ideal surface model is overlaid onto the measurement results based on the bounding box, generating a complete reconstruction of the calculations, A surface-profiling task on a liquid crystal display photo spacer is used to verify the proposed method. The results are compared to those obtained through the use of a scanning electron microscope to demonstrate the accuracy of the proposed method.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.236-243
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• 2014

Surface profiling and film thickness measurement play an important role for inspection. White light interferometry is widely used for engineering surfaces profiling, but its applications are limited primarily to opaque surfaces with relatively simple optical reflection behavior. The conventional bucket algorithm had given inaccurate surface profiles because of the phase error that occurs when a thin-film exists on the top of the surface. Recently, reflectometry and white light scanning interferometry were combined to measure the film thickness and surface profile. These techniques, however, have found that many local minima exist, so it is necessary to make proper initial guesses to reach the global minimum quickly. In this paper we propose combing reflectometry and white light scanning interferometry to measure the thin-film thickness and surface profile. The key idea is to divide the measurement into two states; reflectometry mode and interferometry mode to obtain the thickness and profile separately. Interferogram modeling, which considers transparent thin-film, was proposed to determine parameters such as height and thickness. With the proposed method, the ambiguity in determining the thickness and the surface has been eliminated. Standard thickness specimens were measured using the proposed method. Multi-layered film measurement results were compared with AFM measurement results. The comparison showed that surface profile and thin-film thickness can be measured successfully through the proposed method.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.5-7
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• 2002

For quantitative N depth profiling, N profiles were measured in a～3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

• Proceedings of the SCSK Conference
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• 2003.09b
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• pp.218-218
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• 2003

Recently we showed the prototype portable device for the determination of human skin moisture by using near infrared spectroscopy. In order to optimize the acquiring condition of NIR spectrum of skin and control the target information of water depending the site such as epidermis and dermis, skin depth profiling was investigated changing the distance between illuminations and receiving of radiation in the terminal of fiber probe. The colleted light information could be controlled by changing the distance of the fiber optic probes. It was confirmed that the longer distance we used, the deeper site from the skin surface we could get information from in this study. Four kinds of probes with distances such as 0.03 mm, 0.1 mm, 0.5 mm, and 1.0 mm were used. In addition, the gap size from 0.3 mm to 3.0 mm was studied to control the intensity of water absorbance effectively and to avoid saturation of water absorption. We also investigated the reference materials depending the reflectance ratio for water absorption not to be saturated because of the strong absorptivity of water. Furthermore, spectroscopic information regarding free water and bound water around 1850 nm was investigated by using the different distance of fiber optic probes. This study would be great help to control the spectroscopic information of water to be measured depending the site where water exists.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.231-231
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• 2012

Correct determination of the interface locations is critical for the calibration of the depth scale and measurement of layer thickness in SIMS depth profiling analysis of multilayer films. However, the interface locations are difficult to determine due to the unwanted distortion from the real ones by the several effects due to sputtering with energetic ions. In this study, the layer thicknesses of Si/Ge and Si/Ti multilayer films were measured by SIMS depth profiling analysis using the oxygen and cesium primary ion beam. The interface locations in the multilayer films could be determined by two methods. The interfaces can be determined by the 50 at% definition where the atomic fractions of the constituent layer elements drop or rise to 50 at% at the interfaces. In this method, the raw depth profiles were converted to compositional depth profiles through the two-step conversion process using the alloy reference relative sensitivity factors (AR-RSF) determined by the alloy reference films with well-known compositions determined by Rutherford backscattering spectroscopy (RBS). The interface locations of the Si/Ge and Si/Ti multilayer films were also determined from the intensities of the interfacial composited ions (SiGe+, SiTi+). The determination of the interface locations from the composited ions was found to be difficult to apply due to the small intensity and the unclear variation at the interfaces.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.105-106
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• 2008

• Journal of Microbiology
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• v.44 no.2
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• pp.217-225
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• 2006

Kaposi's sarcoma-associated herpesvirus (KSHV) RTA transcription factor is recruited to its responsive elements through interaction with RBP-Jk that is a downstream transcription factor of the Notch signaling pathway that is important in development and cell fate determination. This suggests that KSHV RTA mimics cellular Notch signal transduction to activate viral lytic gene expression. Here, I demonstrated that unlike other B lymphoma cells, KSHV -infected primary effusion lymphoma BCBL1 cells displayed the constitutive activation of ligand-mediated Notch signal transduction, evidenced by the Jagged ligand expression and the complete proteolytic process of Notch receptor I. In order to investigate the effect of Notch signal transduction on KSHV gene expression, human Notch intracellular (hNIC) domain that constitutively activates RBP-Jk transcription factor activity was expressed in BCBL1 cells, TRExBCBL1-hNIC, in a tetracycline inducible manner. Gene expression profiling showed that like RTA, hNIC robustly induced expression of a number of viral genes including KS immune modulatory gene resulting in downregulation of MHC I and CD54 surface expression. Finally, the genetic analysis of KSHV genome demonstrated that the hNIC-mediated expression of KS during viral latency consequently conferred the downregulation of MHC I and CD54 surface expression. These results indicate that cellular. Notch signal transduction provides a novel expression profiling of KSHV immune deregulatory gene that consequently confers the escape of host immune surveillance during viral latency.

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.89-94
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• 2005

We investigate the reaction stability of cobalt and nickel with side-wall materials of $SiO_2\;and\;Si_3N_4$. We deposited 15nm-Co and 15nm-Ni on $SiO_2(200nm)/p-type$ Si(100) and $Si_3N_4(70 nm)/p-type$ Si(100). The samples were annealed at the temperatures of $700\~1100^{\circ}C$ for 40 seconds with a rapid thermal annealer. The sheet resistance, shape, and composition of the residual materials were investigated with a 4-points probe, a field emission scanning electron microscopy, and an AES depth profiling, respectively. Samples of annealed above $1000^{\circ}C$ showed the agglomeration of residual metals with maze shape and revealed extremely high sheet resistance. The Auger depth profiling showed that the $SiO_2$ substrates had no residual metallic scums after $H_2SO_4$ cleaning while $Si_3N_4$ substrates showed some metallic residuals. Therefore, the $SiO_2$ spacer may be appropriate than $Si_3N_4$ for newly proposed Co/Ni composite salicide process.