Nitrogen Depth Profiles in Ultrathin Oxynitride Films

  • Shon, H.K. (Department of Physics, Chungbuk National University) ;
  • Kang, H.J. (Department of Physics, Chungbuk National University) ;
  • Chang, H.S. (Nano Surface Group, Korea Research Institute of standard and science) ;
  • Kim, H.K. (Nano Surface Group, Korea Research Institute of standard and science) ;
  • Moon, D.W. (Nano Surface Group, Korea Research Institute of standard and science)
  • Published : 2002.06.01

Abstract

For quantitative N depth profiling, N profiles were measured in a~3 m Si oxynitride by low energy O$\sub$2+/sputtering and the result was calibrated with MEIS analysis of the N thickness and areal density. The quantitative depth profile of nitrogen showed the pileup of nitrogen atoms at the interface of ultrathin oxynitride films.

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