• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Journal of the Korean Solar Energy Society
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• v.26 no.4
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.324-327
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• 2000

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.430-431
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow and input current. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.197-203
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• 1999

Stainless steels in general has passive film having strong corrosion resistance on surface. Therefore it must be necessarily removed by etching in mixing solution of sulfuric and chloric acid before Nitriding treatment. But in the ion nitriding, nitride layer was easily formed because passive film was removed without difficult by sputtering effect. The removal extent of these passive films was greatly effected by gas mixing ratios and pressure and holding times of pre sputtering factors in pre sputtering stage. As a results of experiment it has been known that pre sputtering pressure and holding time was not nearly effective on the formation behavior of nitride layer. But when A/H2 gas mixing ratios was 1/2 (vol%) was the most effective of the all pre sputtering conditions. It was resulted from the combination of mechanical reaction byArgon bombardment and chemical reaction by reduction of hydrogen on the passive film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• Textile Coloration and Finishing
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• v.18 no.3 s.88
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• pp.31-41
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• 2006

Functional properties are available with sputtering. But sputtering treatment alone cannot got a good fastness performance to washing, rubbing and light. This research was objected to investigate optimum condition by sputtering on polyester through various processing conditions such as ion current and treatment time, and then various resin treated onto metal coated polyester fabrics in order to increase washing fastness of metal membrane. As the results, the optimum conditions revealed 1500 mA of ion current, 2 min of treatment time in sputter, and suitable resin concentrations were 2% of o.w.s (on the weight of solution) in resin treatment. Therefore, we could get enhanced anti-static effect and flex stiffness as well as washing fastness in sputtered polyester fabric with various resin treatment, for example, melamine and polyurethane.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.