한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

막 두께 변화에 따른 ZnO 박막의 c-축 배향성

C-axis orientation of ZnO thin film on films thickness

  • 성하윤 (경원대학교 공대 전기전자공학부) ;
  • 양진석 (경원대학교 공대 전기전자공학부) ;
  • 금민종 (경원대학교 공대 전기전자공학부) ;
  • 박용욱 (남서울대학교 공과대학 전자정보통신공학부) ;
  • 최형욱 (경원대학교 공대 전기전자공학부) ;
  • 김경환 (경원대학교 공대 전기전자공학부)
  • 발행 : 2000.11.01
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초록

ZnO(Zinc Oxide) thin films were deposited on glass substrate by Facing Targets Sputtering. Facing Targets Sputtering system can deposit thin films in plasma-free situation and change the sputtering conditions in wide range. The characteristics of ZnO thin films deposited at variation of sputtering conditions films thickness, power and substrate temperature were evaluated by XRD(x-ray diffractometer), ${\alpha}$-step (Tencor). The excellently c-axis oriented ZnO thin films were obtained at sputter pressure ImTorr, power 150W, substrate temperature 200$^{\circ}C$. In these conditions, the rocking curve of ZnO thin films deposited on glass was 3.3$^{\circ}$.

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