Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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C-axis orientation of ZnO thin films on sputtering conditions

증착 조건 변화에 따른 ZnO 박막의 c-축 배향성

  • 성하윤 (경원대학교 공대 전기전자공학부) ;
  • 금민종 (경원대학교 공대 전기전자공학부) ;
  • 손인환 (신성대학 전기과) ;
  • 박용욱 (국민대학교 공대 전자공학과) ;
  • 전영하 ;
  • 박용서 (경원대학교 공대 전기전자공학부) ;
  • 김경환 (경원대학교 공대 전기전자공학부)
  • Published : 2000.07.01
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Abstract

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

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