• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.809-812
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• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• 한국세라믹학회지
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• 제39권9호
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• pp.884-889
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• 2002

나노 결정질 $ZrO_2$ 박막을 제조하여 박막의 표면에서 인산칼슘을 유도하는 능력을 편가하기 위하여, 지르코늄 나프테네이트를 출발물질로 사용하고 화학적 용액법을 이용하여, $ZrO_2/Si$ 구조를 제작하였다. 코팅용액을 (100)Si 기판 위에 스핀코팅한 후, 500$^{\circ}C$에서 10분간 전열처리와 800$^{\circ}C$에서 30분간 최종열처리를 행하였고, 모든 열처리는 공기분위기에서 실시하였다. X-ray diffraction analysis를 이용하여 열처리된 박막의 결정화도를 조사하였고, 표면의 미세구조와 표면 거칠기를 field emission-scanning electron microscope와 atomic force microscope를 이용하여 관찰하였다. 열처리 후의 박막은 표면에 미세한 $ZrO_2$ 나노 결정이 생성되어 있었으며, 박막의 계면은 매우 균질 하였다. 유사생채용액에 1일 및 5일간 침적된 샘플의 표면위에 형성된 인산칼슘을 energy dispersive X-ray spectrometer를 이용하여 관찰하였고, fourier transform infrared spectroscopy를 이용하여 인산칼슘에 카본이 치환되어 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• 폴리머
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• 제30권3호
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• pp.207-209
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• 2006

ITO 코팅 글라스를 기판으로 사용하고 폴리(페닐렌에테르설폰)(PES)을 감습막으로 하여 정전용량형 습도센서를 제작하였다. 감습막은 PES를 m-cresol에 용해한 후 스핀코팅으로 제조하였고 그 상부에 다공성 Au막을 스퍼터링으로 증착하였다. 상대습도 $20\sim90%$의 범위에서 센서의 용량은 감습막두께에 반비례하였고 1% 미만의 비선형 특성을 나타내었다. 또한 $1.4{\mu}m$ 두께의 샘플에서는 20 kHz에서 1.3%의 히스테리시스와 1.14의 우수한 감도를 얻을 수 있었다.

• Macromolecular Research
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• 제12권6호
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• pp.581-585
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• 2004

A copolymer P[OSA-MI] was synthesized by copolymerization of its corresponding monomers, N-phenyl maleimide (MI) and 2-octen-l-ylsuccinic anhydride (OSA). The polymer (poly[2-[1-(2,5-dioxo-l-phenylpyrroli­din-3-ylmethyl)heptyl]-succinic acid 4-(2-$\{$ethyl-[4-(4-nitrophen-ylazo)phenyl]amino$\}$ethyl)ester]) P[DR1MA-MI] was obtained from the reaction of P[OSA-MI] with 2-[4-(4-nitrophenylazo)-N-ethylphenylamino] ethanol (DR1). A stable monolayer of P[DRIMA-MI] was formed by spreading the solution of the polymer in chloroform. In Y-type Langmuir-Blodgett (LB) films prepared using this Langmuir-Blodgett method, the second harmonic waves generated from adjacent mono layers canceled each other out. In X-and Z-type LB films, the second harmonic intensity increased upon increasing the number of monolayers, but this increase was somewhat smaller than predicted by the square law. This phenomenon is due to defects or imperfect alignment of the dipoles in the LB film. The generation of second harmonic waves from Y-type LB films having an even number of mono layers supports this argument. The degree of imperfection seemed to increase as the number of layers increased. The second-order nonlinear optical properties of spin-cast films of these polymers were also measured. The largest second harmonic coefficient of the poled P[DRIMA-MI] film coated on a glass plate was 19 pm/V.

• 한국진공학회지
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• 제13권1호
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• pp.39-45
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• 2004

UV-나노임프린팅 (Ultraviolet-Nanoimprinting Lithography:UV-NIL) 공정 기술은 수십 나노에서 수 나노미터 크기의 구조물을 적은 비용으로 대량생산 할 수 있다는 장점을 가지고 있는 기술로 최근 전세계적으로 연구가 활발히 진행되고 있다. 본 연구에서는 반도체 공정 중 마스크 제작 공정을 이용하여 나노패턴을 가진 5${\times}$5${\times}$0.09 인치 크기의 수정스탬프(quartz stamp)를 제작하였고, 임프린팅 (imprinting)시에 레지스트(resist)와 스탬프(stamp) 사이에서 발생하는 점착현상(adhesion)을 방지하고자 그 표면에 Fluoroalkanesilane(FAS) 표면처리를 하였다. 웨이퍼의 평탄도를 개선하고 친수(hydrophilic) 상태의 표면을 만들기 위해 그 표면에 평탄화층을 스핀코팅하였고, 1 nl의 분해능을 가진 디스펜서(dispenser)를 이용하여 레지스트 액적을 도포하였다. 스템프 상의 패턴과 레지스트에 임프린트된 패턴은 SEM, AFM 등을 이용하여 측정하였으며, EVG620-NIL 장비를 이용한 임프린팅 실험에서 370 nm - 1 um 크기의 다양한 패턴을 가진 스탬프의 패턴들이 정확하게 레지스트에 전사됨을 확인하였다.

• 한국재료학회지
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• 제20권11호
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• pp.611-616
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• 2010

A cobalt oxide - tin oxide nanocomposite based gas sensor on an $SiO_2$ substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of $H_2$. The composites showed a highest response of 240% at $250^{\circ}C$ upon exposure to 4% $H_2$. This response is higher than those observed in pure $SnO_2$ (90%) and $Co_3O_4$ (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• 한국안광학회지
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• 제5권2호
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• pp.187-192
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• 2000

본 연구에서는 물 유리의 경제성을 바탕으로 광학적 및 기계적인 특성을 조사하여 투명하고 높은 경도를 가진 표면 보호막의 기능을 검토하기 위하여 $SiO_2-Na_2O-R_mO_n$계 박막을 제조하였다. 물 유리에 CaO와 $Al_2O_3$를 소량의 1 N HCl 1N $NH_4OH$와 함께 각각 첨가하여 코팅용 졸을 준비하였다. Stainless steel. Si wafer. soda-lime-silica glass등 다양한 기판 위에 spin-coating 한 후 질소 분위기 하에서 500, 750 및 $900^{\circ}C$로 최종 열처리를 행했다. 제조된 막은 Knoop 경도계로 micro-hardness를 측정하였다. 막의 표면 질소 함유량을 알아보기 위하여 EDX 분석을 행하였다. 그리고 Field Emission Scanning Electron Microscope(FE-SEM)을 이용하여 막의 표면구조를 관찰하였으며, UV-VIS 스펙트라 측정을 통하여 막의 두께와 반사 특성을 조사하였다.