Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Low Temperature Formation of Ferroelectric $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ Thin Films by Sol-Gel Process and Rapid Thermal Annealing

솔-젤법 및 급속열처리에 의한 $Sr_{0.9}4$Bi_{2.1}$$Ta_2$$O_9$ 박막의 저온형성에 관한 연구

  • 장현호 (고려대학교 재료공학과) ;
  • 송석표 (고려대학교 재료공학과) ;
  • 김병호 (고려대학교 재료공학과)
  • Published : 2000.04.01
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Abstract

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

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References

  1. 消えないICメモリ-FRAMのすべて 川合 知二
  2. Integrated Ferroelectrics v.15 A Critical Comparative review of PZT and SBT-Based Science and Techology for Non-Volatile Ferroelectric Memories Orlando Auciello
  3. Jpn. J. Appl. Phys. v.32 Evaluation of imprint properties in Sol-Gel Ferroelectric Pb(Zr,Ti)O₃Thin-Film Capacitors T. Mihara;H. Watanabe;C. A. Paz de Araujo
  4. Jpn. J. Appl. Phys. v.34 Characteristic of Bismuth layered SrBi₂Ta₂O9 thin-film capacitors and comparison with Pb(Zr,Ti)O₃ T. Mihara;H. Yoshimori(et al.)
  5. Integrated Ferroelectrics v.14 New Low Temperature Processing of Sol-Gel $SrBi_2Ta_2O_9$ Thin Films Y. Ito;M. Ushikubo(et al.)
  6. MRS Bulletin, Electroceramic Thin Films Part I Solution Deposition of Ferroelectric Thin Films B. A. Tuttle;R. W. Schwartz
  7. Appl. Phys. Lett. v.68 Metalorganic Chemical Vapor Deposition of Ferroelectric $SrBi_2Ta_2O_9$Thin Film T. Li;Y. Zhu;S. B. Desu
  8. Appl. Phys. Lett. v.67 Pulsed laser ablation synthesis and chaterization of layered $Pt/SrBi_2Ta_2O_9/Pt$ ferroelectric capacitors with practically no polarization fatigue R. Dat;J. K. Lee
  9. Appl. Phys. Lett. v.68 no.5 Metalorganic chemical vapor deposition of ferroelectric $SrBi_2Ta_2O_9$ thin films T. Li;Y. Zhu;S. B. Desu
  10. Jpn. J. Appl. Phys. v.37 Electrical Properties of $Pt/SrBi_2Ta_2O_9/CeO_2/SiO_2/Si$ Structure for Nondestructive Readout Memory D. S. Shin;H. N. Lee(et al.)
  11. Jpn. J. Appl. Phys. v.37 Effects of Morphological Changes of $Pt/SrBi_2Ta_2O_9$ Interface on the Electrical Properties of Ferroelectric Capacitor D. S. Shin;H. N. Lee(et al.)